Back to results
US 6,645,679 B1Granted
Attenuated phase shift mask for use in EUV lithography and a method of making such a mask
AssigneeAdvanced Micro Devices, Inc.
InventorsBruno M. La Fontaine, Calvin T. Gabriel, Harry J. Levinson, Kouros Ghandehari
Life of this patent
Estimating the term…
Abstract
An attenuated phase shift mask utilizes a multilayer which has been locally modified. Heat treatment or e-beam treatment can locally modify the multilayer to provide different reflective characteristics. The attenuated phase shift mask can be utilized in EUV applications.
Claims20
A mask for integrated circuit fabrication equipment, the mask comprising;
- a multilayer film at least partially reflective to radiation having a wavelength of less than 70 nanometers, the multilayer film having locally modified portions, the locally modified portions being differently reflective at actinic wavelengths than non-locally modified portions;
- a buffer layer disposed above the multilayer film;
- and
- an absorbing layer disposed above the buffer layer, wherein the absorbing layer and the buffer layer include an aperture exposing at least one of the locally modified portions.
1 more element
An attenuated phase shift mask for fabrication equipment, the mask comprising:
- means for reflecting radiation;
- means for attenuating and phase shifting the radiation, wherein the means for reflecting and means for attenuating and phase shifting are on a same surface and are the same material, wherein at least one of the means for attenuating and phase shifting and the means for reflecting radiation is a depression on the same surface;
- and
- a heat mask over the multilayer film, the heat mask including a buffer layer and a metal layer.
1 more element
A method of manufacturing a mask, the method comprising:
- providing a multilayer film on a substrate;
- providing a heat mask over the multilayer film, the heat mask including a buffer layer and a metal layer;
- etching the heat mask selectively to form a pattern;
- and
- heat treating the multilayer film in accordance with the pattern.
2 more elements
Dependencies are inferred from the claim text.