Electron beam exposure mask, electron beam exposure method, method of fabricating semiconductor device, and electron beam exposure apparatus
AssigneeNEC Electronics Corporation
InventorMami Miyasaka
Life of this patent
Estimating the term…
Abstract
An electron beam exposure mask comprises a main mask and one or more compensation masks. The main mask has a plurality of first defined masks. The compensation mask includes one or more non-defective second defined masks each having a pattern configuration to be formed in a defective among said first defined masks. In performing exposures by using this electron beam exposure mask, first defined masks are used as long as the first defined masks are non-defective, and the second defined mask corresponding to a first defined mask is used when the first defined mask is defective.
Claims4
An electron beam exposure mask comprising:
- a main mask having a plurality of first defined masks;
- and
- one or more compensation masks including one or more non-defective second defined masks each having a pattern configuration to be used instead of said first defined masks in the presence of a defective among said first defined masks, a first defined mask being used when said first defined mask is non-defective, and said second defined mask corresponding to said first defined mask being used when said first defined mask is defective, none of said first defined masks contacting any of said second defined masks.
An electron beam exposure method comprising the steps of:
- recording the address of a defective first defined mask in a main mask having a plurality of first defined masks;
- recording the address of a second defined mask corresponding to said defective first defined mask, in a compensation mask including one or more non-defective second masks each having a pattern configuration to be formed in part of said first defined masks in the presence of a defective among said first defined masks;
- and,
- when the address of said defective first defined mask is designated, replacing it with the address of said second defined mask corresponding to said first defined mask.
Dependencies are inferred from the claim text.