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US 6,645,567 B2Granted
Electroless plating bath composition and method of using
AssigneeIntel Corporation
InventorsRamanan V. Chebiam, Valery M. Dubin
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Abstract
The present invention relates to a cobalt electroless plating bath composition and method of using it for microelectronic device fabrication. In one embodiment, the present invention relates to cobalt electroless plating in the fabrication of interconnect structures in semiconductor devices.
Claims15
A process comprising:
- combining a primary metal and ammonium sulphate in a first solution;
- mixing tetramethylammonium hydroxide into the first solution to form a second solution;
- adjusting pH and temperature of the second solution;
- mixing dimethylamineborane and ammonium hypophosphite into the second solution to form a third solution;
- adjusting pH and temperature of the third solution;
- and
- forming a primary metal layer by applying the third solution to a substrate under conditions that cause the primary metal to precipitate onto the substrate.
4 more elements
A process comprising:
- combining cobalt chloride, ammonium sulphate, tetramethylammonium hydroxide, dimethylamine borane, and ammonium hypophosphite in a solution;
- adjusting the solution's pH;
- adjusting the solution's temperature;
- and
- applying the solution to a substrate under conditions to cause the formation of a cobalt layer onto the substrate.
2 more elements
Dependencies are inferred from the claim text.