Back to results
US 6,645,311 B2Granted
Method of reducing water spotting and oxide growth on a semiconductor structure
AssigneeMicron Technology, Inc.
InventorDonald L. Yates
Life of this patent
Estimating the term…
Abstract
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
Claims16
A method of treating a semiconductor structure comprising:
- providing a first treatment vessel;
- performing a first treatment upon said semiconductor structure in said first treatment vessel;
- providing a second treatment vessel having a fail-shut effluent valve;
- transferring said semiconductor structure from said first treatment vessel to said second treatment vessel;
- rinsing said semiconductor structure in said second treatment vessel;
- and
- drying said semiconductor structure in said second treatment vessel.
4 more elements
Dependencies are inferred from the claim text.