Rational directional solidification crystal growth system and method
AssigneeNational Taiwan University
InventorsChung-Wen Lan, Ya-Wen Yang
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Abstract
A rotational directional solidification crystal growth system includes a vertical furnace, a crucible, and a rotate support device. The vertical furnace contains a high-temperature portion and a low-temperature portion. The crucible has a seed well and a growth region. The seed well and the growth region contain a seed crystal and raw material, respectively. The crucible moves from the high-temperature portion of the furnace to the low-temperature portion of the furnace or the thermal profile moves related to a stationary crucible to proceed the crystal growth. The rotation support device supports and rotates the crucible, and the tangent velocity of the rotated crucible is no less than about 5π/3 cm/s.
Claims28
A rotational directional solidification crystal growth system, comprising:
- a vertical furnace;
- a crucible having a seed well and a growth region, wherein the seed well contains a seed crystal, and the growth region contains raw material and a dopant which is distributed in the raw material;
- and
- a rotation support device, which supports and rotates the crucible, wherein the tangent velocity of the rotated crucible is no less than about 5π/3 cm/s.
A rotational directional solidification crystal growth method, comprising:
- a crucible which contains a seed crystal and raw material;
- heating the crucible to melt the raw material;
- rotating the crucible, wherein the tangent velocity of the rotated crucible is no less than about 5π/3 cm/s;
- and
- cooling the crucible to solidify the raw material initiating from the seed crystal.
Dependencies are inferred from the claim text.