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US 6,643,441 B1Granted
Optoelectronic device having a direct patch mask formed thereon and a method of manufacture therefor
AssigneeAgere Sytems Inc.
InventorsRobert M. Pafchek, John Salama
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Abstract
The present invention provides an optoelectronic device with superior qualities. The optoelectronic device includes an optical core feature located over a substrate, an outer cladding layer located over the optical core feature and a direct patch mask formed on an outer cladding layer. In an exemplary embodiment of the invention, the direct patch mask has a light source passed therethrough that corrects birefringence in the optical core feature and the outer cladding layer.
Claims23
An optoelectronic device, comprising:
- a phosphorous doped silica optical core feature located over a silicon substrate;
- a boron phosphorous doped tetraethylorthosilicate (TEOS) outer cladding layer located over the optical core feature;
- an undoped silica inner cladding layer located between the silicon substrate and the optical core feature;
- and
- a direct patch mask formed on the outer cladding layer.
2 more elements
An optical fiber communications system, comprising:
- an optical fiber;
- a transmitter and a receiver connected by the optical fiber;
- and
- an optoelectronic device including:
- a phosphorous doped silica optical core feature located over a silicon substrate;
- a boron phosphorous doped tetraethylorthosilicate (TEOS) outer cladding layer located over the optical core feature;
- an undoped silica inner cladding layer located between the silicon substrate and the optical core feature;
- and
- a direct patch mask formed on the outer cladding layer.
6 more elements
Dependencies are inferred from the claim text.