Back to results
US 6,643,178 B2Granted
System for source side sensing
AssigneeFujitsu Limited
InventorKazuhiro Kurihara
Life of this patent
Estimating the term…
Abstract
System for source side sensing in a memory device. The system includes a source side sensing circuit for use in a memory device to determine core cell data from core cell current. The source side sensing circuit includes a constant current source coupled to receive the core cell current, and a cascode circuit coupled to the constant current source to convert the core cell current to an output voltage that is representative of the core cell data.
Claims6
A source side sensing circuit for use in a memory device to determine core cell data from core cell current, the source side sensing circuit comprising:
- a constant current source coupled to a source of the core cell, that receives the core cell current;
- and
- a cascode circuit coupled to the source of the core cell, that converts the core cell current to an output voltage that is representative of the core cell data, said cascode circuit including first and second transistors coupled together at common source and drain terminals.
Dependencies are inferred from the claim text.