Spin valve thin film magnetic element and method of manufacturing the same

A spin valve thin film element comprising:

• an antiferromagnetic layer comprising a Pt—Mn—X′ alloy, where X′ represents at least one element selected from Pd, Cr, Ru, Ni, Ir, Rh, Os, Au, Ag, Ne, Ar, Xe, and Kr;
• a pinned magnetic layer operatively disposed to have an exchange coupling magnetic field with the antiferromagnetic layer;
• a nonmagnetic conductive layer disposed adjacent to the pinned magnetic layer;
• a free magnetic layer disposed adjacent to the nonmagnetic conductive layer, where the magnetization direction of the free magnetic layer is oriented in a direction crossing the magnetization direction of the pinned magnetic layer;
• and
• a backed layer operatively connected to a side of the free magnetic layer opposite to the nonmagnetic conductive layer side.

A spin valve thin film element comprising:

• an antiferromagnetic layer;
• a pinned magnetic layer operatively disposed to have an exchange coupling magnetic field with the antiferromagnetic layer;
• a nonmagnetic conductive layer disposed adjacent to the pinned magnetic layer;
• a free magnetic layer disposed adjacent to the nonmagnetic conductive layer, where the magnetization direction of the free magnetic layer is oriented in a direction crossing the magnetization direction of the pinned magnetic layer;
• and
• a backed layer operatively connected to a side of the free magnetic layer opposite to the nonmagnetic conductive layer side, where the backed layer has a protecting layer, where the protecting layer comprises tantalum and tantalum oxide.

A spin valve thin film element comprising:

• an antiferromagnetic layer;
• a pinned magnetic layer operatively disposed to have an exchange coupling magnetic field with the antiferromagnetic layer;
• a nonmagnetic conductive layer disposed adjacent to the pinned magnetic layer;
• a free magnetic layer disposed adjacent to the nonmagnetic conductive layer, where the magnetization direction of the free magnetic layer is oriented in a direction crossing the magnetization direction of the pinned magnetic layer;
• a backed layer operatively connected to a side of the free magnetic layer opposite to the nonmagnetic conductive layer side;
• hard bias layers operatively disposed adjacent to the free magnetic layer, the hard bias layers to orient the magnetization direction of the free magnetic layer in a direction crossing the magnetization direction of the pinned magnetic layer;
• and
• at least one intermediate layer provided between the backed layer and the hard bias layers, the intermediate layer comprising one of Ta and Cr.

A spin valve thin film element comprising:

• an antiferromagnetic layer;
• a pinned magnetic layer operatively disposed to have an exchange coupling magnetic field with the antiferromagnetic layer;
• a nonmagnetic conductive layer disposed adjacent to the pinned magnetic layer;
• a free magnetic layer disposed adjacent to the nonmagnetic conductive layer, where the magnetization direction of the free magnetic layer is oriented in a direction crossing the magnetization direction of the pinned magnetic layer;
• and
• a backed layer operatively connected to a side of the free magnetic layer opposite to the nonmagnetic conductive layer side;
• hard bias layers operatively disposed adjacent to the free magnetic layer, the hard bias layers to orient the magnetization direction of the free magnetic layer in a direction crossing the magnetization direction of the pinned magnetic layer;
• and
• electrode layers operatively disposed on the hard bias layers, the electrode layers to supply a sensing current;
• where the antiferromagnetic layer, the pinned magnetic layer, the nonmagnetic conductive layer, the free magnetic layer, and the backed layer form a lamination, and
• where the electrode layers extend from both sides of the lamination to a central portion of a surface of the lamination.