Transflective LCD device and method of fabricating the same

A transflective liquid crystal display device, comprising:

• a substrate;
• a gate pad and a gate line formed on the substrate, the gate line including a gate electrode that extends from the gate pad in one direction, the gate pad being disposed on one side of the substrate;
• a gate-insulating layer formed on the substrate, the gate-insulating layer covering the gate line and the gate electrode;
• a silicon layer formed on the gate-insulating layer, the silicon layer being disposed over the gate electrode;
• a source electrode and a drain electrode spaced apart from each other with the silicon layer centered therebetween;
• a data line formed on the gate-insulating layer, the data line crossing the gate line, connecting with the source electrode, and having a source pad at one end thereof;
• a pixel region defined by the crossing gate line and the data line;
• a first passivation layer formed on the source electrode;
• a reflective electrode formed on the first passivation layer, the reflective electrode having a through hole and being disposed in the pixel region;
• a second passivation layer formed on the reflective electrode, wherein the second passivation layer includes a drain contact hole positioned over the drain electrode, a gate pad contact hole positioned over the gate pad, and a source pad contact hole positioned over the source pad, each contact hole passing through the second passivation layer;
• a transparent electrode formed over the reflective electrode;
• a gate pad terminal formed over the gate pad;
• and
• a source pad terminal formed over the source pad, wherein the transparent electrode contacts the drain electrode via the drain contact hole, the gate pad terminal contacts the gate pad via the gate pad contact hole, and the source pad terminal contacts the source pad via the source pad contact hole.

A method of fabricating a transflective liquid crystal display device, the method comprising the steps of:

• forming a gate pad, a gate line, and a gate electrode on a substrate, the gate pad being disposed on one side of the substrate, the gate line extending from the gate pad in one direction;
• forming a gate-insulating layer on the substrate, the gate insulating layer covering the gate line and the gate electrode;
• forming a silicon layer on the gate-insulating layer, the silicon layer having an island shape and being disposed over the gate electrode;
• forming a source pad, a data line, a source electrode, and a drain electrode on the gate insulating layer, wherein the data line crosses the gate line and extends from the source pad, and the source electrode and the drain electrode are spaced apart from each other and overlap a portion of the silicon layer;
• forming a first passivation layer on the substrate to cover the source and drain electrodes;
• forming a reflective electrode on the first passivation layer, the reflective electrode having a hole therethrough;
• forming a second passivation layer on the reflective electrode;
• forming a drain contact hole, a gate pad contact hole, and a source pad contact hole pass through the second passivation layer positioned over the drain electrode, the gate pad, and the source pad, respectively;
• and
• forming a transparent electrode on the second passivation layer, the transparent electrode contacting the drain electrode via the drain contact hole, contacting the gate pad via the gate pad contact hole, and contacting the source pad via the source pad contact hole.