Surface acoustic wave device utilizing a ZnO layer and a diamond layer

A SAW device having a ZnO layer laminated on SAW-exciting IDTs placed on a thin dielectric film made of a diamond layer formed singly or formed on a substrate, the SAW device being characterized by the conditions of:

• (a) providing a two-dimensional orthogonal-coordinate system, in which the axis of abscissa is represented by (2π·H/λM) and the axis of ordinate is represented by dm, where H signifies the thickness of the ZnO layer, λM signifies the wavelength of a harmonic of a SAW, and dm signifies the line width of the IDTs;
• (b) in the orthogonal-coordinate system, connecting:
• point A given by the coordinates, (2π·H/λM)=1.2 and dm=0.775;
• point B given by the coordinates, (2π·H/λM)=2.0 and dm=0.651;
• point C given by the coordinates, (2π·H/λM)=3.0 and dm=0.543;
• point D given by the coordinates, (2π·H/λM)=3.4 and dm=0.500;
• point E given by the coordinates, (2π·H/λM)=1.8 and dm=0.500;
• and
• point A;
• in this order to provide a range ABCDEA surrounded by five lengths of lines;
• (c) structuring the SAW device so that (2π·H/λM) and dm can fall within the range ABCDEA including the surrounding five lengths of lines;
• (d) producing the SAW device with the IDTs having a line width of 0.5 μm or more;
• (e) utilizing the fifth harmonic in the 0th-order mode of the SAW excited by the IDTs;
• and
• (f) operating the SAW device at a frequency not less than 9.5 GHz and not more than 10.5 GHz.

A SAW device having a ZnO layer laminated on SAW-exciting IDTs placed on a thin dielectric film made of a diamond layer formed singly or formed on a substrate, the SAW device being characterized by the conditions of:

• (a) providing a two-dimensional orthogonal-coordinate system, in which the axis of abscissa is represented by (2π·H/λM) and the axis of ordinate is represented by dm, where H signifies the thickness of the ZnO layer, λM signifies the wavelength of a harmonic of a SAW, and dm signifies the line width of the IDTs;
• (b) in the orthogonal-coordinate system, connecting:
• point A given by the coordinates, (2π·H/λM)=0.8 and dm=1.13;
• point B given by the coordinates, (2π·H/λM)=1.0 and dm=1.01;
• point C given by the coordinates, (2π·H/λM)=1.2 and dm=1.02;
• point D given by the coordinates, (2π·H/λM)=1.4 and dm=0.775;
• point E given by the coordinates, (2π·H/λM)=1.2 and dm=0.68;
• point F given by the coordinates, (2π·H/λM)=1.0 and dm=0.792;
• and
• point A;
• in this order to provide a range ABCDEFA surrounded by six lengths of lines;
• (c) structuring the SAW device so that (2π·H/λM) and dm can fall within the range ABCDEFA including the surrounding six lengths of lines;
• (d) producing the SAW device with the IDTs having a line width of 0.5 μm or more;
• (e) utilizing the fifth harmonic in the 1st-order mode of the SAW excited by the IDTs;
• and
• (f) operating the SAW device at a frequency not less than 9.5 GHz and not more than 10.5 GHz.

A SAW device having a short-circuiting electrode laminated on a ZnO layer laminated on SAW-exciting IDTs placed on a thin dielectric film made of a diamond layer formed singly or formed on a substrate, the SAW device being characterized by the conditions of:

• (a) providing a two-dimensional orthogonal-coordinate system, in which the axis of abscissa is represented by (2π·H/λM) and the axis of ordinate is represented by dm, where H signifies the thickness of the ZnO layer, λM signifies the wavelength of a harmonic of a SAW, and dm signifies the line width of the IDTs;
• (b) in the orthogonal-coordinate system, connecting:
• point A given by the coordinates, (2π·H/λM)=0.8 and dm=0.900;
• point B given by the coordinates, (2π·H/λM)=1.0 and dm=0.910;
• point C given by the coordinates, (2π·H/λM)=1.5 and dm=0.853;
• point D given by the coordinates, (2π·H/λM)=2.0 and dm=0.682;
• point E given by the coordinates, (2π·H/λM)=2.5 and dm=0.589;
• point F given by the coordinates, (2π·H/λM)=3.0 and dm=0.527;
• point G given by the coordinates, (2π·H/λM)=3.2 and dm=0.500;
• point H given by the coordinates, (2π·H/λM)=1.6 and dm=0.500;
• point I given by the coordinates, (2π·H/λM)=1.5 and dm=0.523;
• point J given by the coordinates, (2π·H/λM)=1.0 and dm=0.715;
• and
• point A;
• in this order to provide a range ABCDEFGHIJA surrounded by 10 lengths of lines;
• (c) structuring the SAW device so that (2π·H/λM) and dm can fall within the range ABCDEFGHIJA including the surrounding 10 lengths of lines;
• (d) producing the SAW device with the IDTs having a line width of 0.5 μm or more;
• (e) utilizing the fifth harmonic in the 0th-order mode of the SAW excited by the IDTs;
• and
• (f) operating the SAW device at a frequency not less than 9.5 GHz and not more than 10.5 GHz.

A SAW device having a short-circuiting electrode laminated on a ZnO layer laminated on SAW-exciting IDTs placed on a thin dielectric film made of a diamond layer formed singly or formed on a substrate, the SAW device being characterized by the conditions of:

• (a) providing a two-dimensional orthogonal-coordinate system, in which the axis of abscissa is represented by (2π·H/λM) and the axis of ordinate is represented by dm, where H signifies the thickness of the ZnO layer, λM signifies the wavelength of a harmonic of a SAW, and dm signifies the line width of the IDTs;
• (b) in the orthogonal-coordinate system, connecting:
• point A given by the coordinates, (2π·H/λM)=0.5 and dm=1.60;
• point B given by the coordinates, (2π·H/λM)=1.0 and dm=1.15;
• point C given by the coordinates, (2π·H/λM)=1.4 and dm=0.675;
• point D given by the coordinates, (2π·H/λM)=1.0 and dm=0.703;
• point E given by the coordinates, (2π·H/λM)=0.5 and dm=1.16;
• and
• point A;
• in this order to provide a range ABCDEA surrounded by five lengths of lines;
• (c) structuring the SAW device so that (2π·H/λM) and dm can fall within the range ABCDEA including the surrounding five lengths of lines;
• (d) producing the SAW device with the IDTs having a line width of 0.5 μm or more;
• (e) utilizing the fifth harmonic in the 1st-order mode of the SAW excited by the IDTs;
• and
• (f) operating the SAW device at a frequency not less than 9.5 GHz and not more than 10.5 GHz.

A SAW device having SAW-exciting IDTs placed on a ZnO layer laminated on a short-circuiting electrode laminated on a thin dielectric film made of a diamond layer formed singly or formed on a substrate, the SAW device being characterized by the conditions of:

• (a) providing a two-dimensional orthogonal-coordinate system, in which the axis of abscissa is represented by (2π·H/λM) and the axis of ordinate is represented by dm, where H signifies the thickness of the ZnO layer, λM signifies the wavelength of a harmonic of a SAW, and dm signifies the line width of the IDTs;
• (b) in the orthogonal-coordinate system, connecting:
• point A given by the coordinates, (2π·H/λM)=1.0 and dm=0.813;
• point B given by the coordinates, (2π·H/λM)=1.5 and dm=0.770;
• point C given by the coordinates, (2π·H/λM)=1.7 and dm=0.613;
• point D given by the coordinates, (2π·H/λM)=1.5 and dm=0.581;
• and
• point A;
• in this order to provide a range ABCDA surrounded by four lengths of lines;
• (c) structuring the SAW device so that (2π·H/λM) and dm can fall within the range ABCDA including the surrounding four lengths of lines;
• (d) producing the SAW device with the IDTs having a line width of 0.5 μm or more;
• (e) utilizing the fifth harmonic in the 0th-order mode of the SAW excited by the IDTs;
• and
• (f) operating the SAW device at a frequency not less than 9.5 GHz and not more than 10.5 GHz.

A SAW device having SAW-exciting IDTs placed on a ZnO layer laminated on a short-circuiting electrode laminated on a thin dielectric film made of a diamond layer formed singly or formed on a substrate, the SAW device being characterized by the conditions of:

• (a) providing a two-dimensional orthogonal-coordinate system, in which the axis of abscissa is represented by (2π·H/λM) and the axis of ordinate is represented by dm, where H signifies the thickness of the ZnO layer, λM signifies the wavelength of a harmonic of a SAW, and dm signifies the line width of the IDTs;
• (b) in the orthogonal-coordinate system, connecting:
• point A given by the coordinates, (2π·H/λM)=1.0 and dm=1.01;
• point B given by the coordinates, (2π·H/λM)=2.0 and dm=0.798;
• point C given by the coordinates, (2π·H/λM)=3.0 and dm=0.783;
• point D given by the coordinates, (2π·H/λM)=4.0 and dm=0.725;
• point E given by the coordinates, (2π·H/λM)=5.0 and dm=0.619;
• point F given by the coordinates, (2π·H/λM)=5.2 and dm=0.540;
• point G given by the coordinates, (2π·H/λM)=5.0 and dm=0.506;
• point H given by the coordinates, (2π·H/λM)=4.0 and dm=0.525;
• point I given by the coordinates, (2π·H/λM)=3.0 and dm=0.567;
• point J given by the coordinates, (2π·H/λM)=2.0 and dm=0.653;
• point K given by the coordinates, (2π·H/λM)=1.0 and dm=0.792;
• and
• point A;
• in this order to provide a range ABCDEFGHIJKA surrounded by 11 lengths of lines;
• (c) structuring the SAW device so that (2π·H/λM) and dm can fall within the range ABCDEFGHIJKA including the surrounding 11 lengths of lines;
• (d) producing the SAW device with the IDTs having a line width of 0.5 μm or more;
• (e) utilizing the fifth harmonic in the 1st-order mode of the SAW excited by the IDTs;
• and
• (f) operating the SAW device at a frequency not less than 9.5 GHz and not more than 10.5 GHz.

A SAW device having a short-circuiting electrode laminated on a ZnO layer laminated on SAW-exciting IDTs placed on a thin dielectric film made of a diamond layer formed singly or formed on a substrate, the SAW device being characterized by the conditions of:

• (a) providing a two-dimensional orthogonal-coordinate system, in which the axis of abscissa is represented by (2π·H/λM) and the axis of ordinate is represented by dm, where H signifies the thickness of the ZnO layer, λM signifies the wavelength of a harmonic of a SAW, and dm signifies the line width of the IDTs;
• (b) in the orthogonal-coordinate system, connecting:
• point A given by the coordinates, (2π·H/λM)=0.50 and dm=0.50;
• point B given by the coordinates, (2π·H/λM)=0.50 and dm=0.66;
• point C given by the coordinates, (2π·H/λM)=0.80 and dm=0.54;
• point D given by the coordinates, (2π·H/λM)=0.90 and dm=0.50;
• and
• point A;
• in this order to provide a range ABCDA surrounded by four lengths of lines;
• (c) in the orthogonal-coordinate system, connecting:
• point E given by the coordinates, (2π·H/λM)=0.50 and dm=0.99;
• point F given by the coordinates, (2π·H/λM)=0.50 and dm=1.16;
• point G given by the coordinates, (2π·H/λM)=0.90 and dm=0.75;
• point H given by the coordinates, (2π·H/λM)=0.80 and dm=0.81;
• and
• point E;
• in this order to provide a range EFGHE surrounded by four lengths of lines;
• (d) structuring the SAW device so that (2π·H/λM) and dm can fall within either of the range ABCDA including the surrounding four lengths of lines or the range EFGHE including the surrounding four lengths of lines;
• (e) producing the SAW device with the IDTs having a line width of 0.5 μm or more;
• (f) utilizing the third harmonic in the 1st-order mode of the SAW excited by the IDTs;
• and
• (g) operating the SAW device at a frequency not less than 9.5 GHz and not more than 10.5 GHz.