Probe structure and manufacturing method thereof
AssigneeHoya Corporation
InventorKenichi Masuda
Life of this patent
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Abstract
In a probe structure which has a bump contact protruded from one surface of an insulating substrate, the bump contact is deposited such that a surface roughness falls within a predetermined range specified by Rmax within a range from 0.01 to 0.8 μm, Ra within a range from 0.001 to 0.4 μm, and a ratio of Rmax/Ra within a range from 2 to 10. Such a surface roughness is realized by depositing a convex/concave layer formed by aggregation of fine grains. The convex/concave layer is directly deposited to a basic shape portion without any intermediate layer left between the convex/concave layer and the basic shape portion.
Claims3
A semiconductor tester which comprises a probe structure which has a plurality of bump contacts on an insulating substrate, wherein each of the bump contacts has a surface roughness which is specified by Rmax within a range from 0.01 to 0.8 μm, Ra within a range from 0.001 to 0.4 μm, and a ratio of Rmax/Ra within a range from 2 to 10.
Dependencies are inferred from the claim text.