Charged particle beam exposing apparatus
AssigneeKabushiki Kaisha Toshiba
InventorMunehiro Ogasawara
Life of this patent
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Abstract
A charged particle beam exposing apparatus has an electromagnetic lens and a deflector, and performs pattern lithography by converging a charged particle beam on a sample by the electromagnetic lens and controlling an irradiation position on the sample by the deflector. At least two pairs of quadrupole field generators which generate a quadrupole field are provided along a beam axis so as to give converging force to the charged particle beam, and a focusing position of the charged particle beam is corrected by changing the intensity of the quadrupole field generators in accordance with a deflection position of the charged particle beam on the sample.
Claims19
A charged particle beam exposing apparatus comprising:
- a charged particle beam gun;
- a first shaping aperture which forms a charged particle beam from said beam gun into a predetermined shape and passes it therethrough;
- a first projection lens which is provided on a downstream side of said first shaping aperture;
- a shaping deflector which deflects said charged particle beam which passes through said first projection lens;
- a second projection lens on which said charged particle beam which passes through said shaping deflector is incident;
- a second shaping aperture which forms said charged particle beam which passes through said second projection lens into a predetermined shape and passes it therethrough;
- a reduction lens on which said charged particle beam which passes through said second shaping aperture is incident;
- an objective deflector which is provided on a downstream side of said reduction lens and deflects said charged particle beam which passes through said reduction lens;
- an object lens on which said charged particle beam which passes through said objective deflector is incident;
- a sample base which is provided on a downstream side of said object lens;
- and
- at least two pairs of quadrupole field generators which are provided between said second shaping aperture and said sample base along a beam axis so as to give converging force to said charged particle beam and generate a quadrupole field, a field intensity of said quadrupole field generators being variable in accordance with a deflection position of said charged particle beam on a sample mounted on said sample base in order to correct a focusing position of said charged particle beam.
A charged particle beam exposing apparatus comprising:
- a charged particle beam gun;
- a shaping aperture which forms a charged particle beam from said beam gun into a predetermined shape and passes it therethrough;
- a first projection lens which is provided on a downstream side of said shaping aperture;
- a shaping deflector which deflects said charged particle beam which passes through said first projection lens;
- a second projection lens on which said charged particle beam which passes through said shaping deflector is incident;
- a mask which forms said charged particle beam which passes through said second projection lens into a predetermined pattern and passes it therethrough;
- a reduction lens on which said charged particle beam which passes through said mask is incident;
- an objective deflector which is provided on a downstream side of said reduction lens and deflects said charged particle beam;
- an object lens on which said charged particle beam which passes through said objective deflector is incident;
- a sample base which is provided on a downstream side of said object lens;
- and
- at least two pairs of quadrupole field generators which are provided between said mask and said sample base along a beam axis so as to give converging force to said charged particle beam and generate a quadrupole field, a field intensity of said quadrupole field generators being variable in accordance with a deflection position of said charged particle beam on a sample mounted on said sample base in order to correct a focusing position of said charged particle beam.
A charged particle beam exposing apparatus comprising:
- a charged particle beam gun;
- a shaping aperture which forms a charged particle beam from said beam gun into a predetermined shape and passes it therethrough;
- a first projection lens which is provided on a downstream side of said shaping aperture;
- a shaping deflector which deflects said charged particle beam which passes through said first projection lens;
- a second projection lens on which said charged particle beam which passes through said shaping deflector is incident;
- a mask which forms said charged particle beam which passes through said second projection lens into a predetermined pattern and passes it therethrough;
- a reduction lens on which said charged particle beam which passes through said mask is incident;
- an objective deflector which is provided on a downstream side of said reduction lens and deflects said charged particle beam which passes through said reduction lens;
- an object lens on which said charged particle beam which passes through said objective deflector is incident;
- a sample base which is provided on a downstream side of said object lens;
- and
- at least two pairs of quadrupole field generators which are provided between said shaping aperture and said mask along a beam axis so as to give converging force to said charged particle beam and generate a quadrupole field, a field intensity of said quadrupole field generators being variable in accordance with a deflection position of said charged particle beam on said mask in order to correct a focusing position of said charged particle beam.
Dependencies are inferred from the claim text.