Capacitor-type semiconductor device

A capacitor-type semiconductor device comprising of:

• a first electrode capable of Lowering its resistance made of an anaerobic material on a semiconductor substrate;
• an insulation layer on the first electrode;
• a second electrode capable of lowering its electric resistance made of a refractory metal and silicon on a first capacitance portion,
• wherein the insulation layer includes the first capacitance portion containing oxygen and a second capacitance portion made of an oxygen penetrating redistricting material, the second capacitance portion is located between the first electrode and the first capacitance portion.

A capacitor-type semiconductor device comprising:

• a lower electrode containing an anaerobic material capable of lowering its resistance on a semiconductor substrate;
• an insulation layer on the lower electrode comprising a first capacitance portion containing oxygen and a second capacitance portion made of an oxygen penetrating restricting material located between the lower electrode and the first capacitance portion;
• and
• an upper electrode on the first capacitance portion.

A capacitor-type semiconductor device comprising:

• a first electrode capable of lowering its resistance made of an anaerobic material on a semiconductor substrate;
• insulation layer on the first electrode comprising a first capacitance portion containing oxygen and a second capacitance portion made of an oxygen penetrating restricting material located the first electrode and the first capacitance portion;
• and
• a second electrode capable of lowering its electric resistance made of a refractory metal and silicon on the first capacitance portion.