System and method for adhesion improvement at an interface between fluorine doped silicon oxide and tantalum

An interface region of a Fluorine doped Silicon-Oxide structure, comprising:

• a nitrided region interposed between a barrier layer and a Fluorine doped Silicon-Oxide region of the Fluorine doped Silicon-Oxide structure,
• wherein the nitrided region is adjacent the Fluorine doped Silicon-Oxide region,
• wherein the nitrided region includes:
• an amount of Silicon Nitride (SiN);
• and
• an amount of Tantalum Nitride (TaN), and
• wherein a concentration of the amount of Silicon Nitride (SiN) adjacent the Fluorine doped Silicon-Oxide region is greater than a concentration of the amount of Silicon Nitride (SiN) in an upper region of the nitrided region.

An interface region of a Fluorine doped Silicon-Oxide structure, comprising:

• a nitrided region interposed between a barrier layer and a Fluorine doped Silicon-Oxide region of the Fluorine doped Silicon-Oxide structure,
• wherein the nitrided region is adjacent the Fluorine doped Silicon-Oxide region,
• wherein the nitrided region is a graded region,
• wherein the nitrided region includes:
• an amount of Silicon Nitride (SiN);
• and
• an amount of Tantalum Nitride (TaN), and
• wherein a concentration of the amount of Silicon Nitride (SiN) increases from a concentration of the amount of Silicon Nitride (SiN) in an upper region of the nitrided region to a greater concentration of the amount of Silicon Nitride (SiN) adjacent the Fluorine doped Silicon-Oxide region, and
• wherein a concentration of Tantalum Nitride (TaN) increases from a concentration of the amount of Tantalum Nitride (TaN) in a lower region of the nitrided region to a greater concentration of Tantalum Nitride (TaN) adjacent the barrier layer.