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US 6,642,617 B2Granted
Semiconductor device
AssigneeFujitsu Quantum Devices Limited
InventorTakahisa Kawai
Life of this patent
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Abstract
A semiconductor device includes a SAW device chip. The SAW device chip is provided on a passive element chip in which a passive element circuit including a transmission line is formed on a semi-insulating compound substrate having one surface set to have a ground potential electrode. In the semiconductor device, even when the width of the transmission line is increased, a high characteristic impedance can be maintained by increasing the thickness of the substrate. This can reduce the resistance of the transmission line and can facilitate matching with the SAW device.
Claims8
A semiconductor device comprising:
- a passive element chip including a passive element circuit including passive elements as circuit elements, said passive element circuit being provided on a semi-insulating compound-semiconductor substrate in which one surface thereof is set to have a ground potential and in which the other surface thereof has neither transistor nor diode;
- and
- a surface-acoustic-wave-device chip on which a surface acoustic wave device is formed;
- wherein:
- said surface-acoustic-wave-device chip is provided on said passive element chip so that said surface acoustic wave devices are electrically connected to said passive element circuit;
- and
- said passive element circuit includes a transmission line which is formed on said semi-insulating compound-semiconductor substrate and which functions in combination with the surface having the ground potential.
4 more elements
Dependencies are inferred from the claim text.