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US 6,642,615 B2Granted
Semiconductor device and method of manufacturing the same, circuit board and electronic instrument
AssigneeSeiko Epson Corporation
InventorsNobuaki Hashimoto, Terunao Hanaoka
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device comprising the steps of: forming a bump projecting from a first surface of a semiconductor chip; and forming a conductive layer so that part of the conductive layer is exposed at a position depressed from a second surface of the semiconductor chip opposite to the first surface, wherein the exposed part of the conductive layer and the bump become electrical connecting sections.
Claims13
A semiconductor device manufactured by a method comprising the steps of:
- forming a conductive layer on a horizontal surface of a semiconductor element on which is provided an electrode and electrically connecting the conductive layer to the electrode;
- forming a first vertically extending electrical connecting section on the conductive layer and not above the electrode;
- and
- forming a hole in the semiconductor element so that part of a surface of the conductive layer on the side of the semiconductor element is exposed as a second electrical connecting section.
1 more element
A semiconductor device manufactured by a method comprising the steps of:
- manufacturing a first semiconductor device;
- manufacturing a second semiconductor device;
- and
- stacking the first and second semiconductor devices,
- wherein each of the steps of manufacturing the first and second semiconductor devices includes:
- forming a conductive layer on a horizontal surface of a semiconductor element on which is provided an electrode and electrically connecting the conductive layer to the electrode;
- forming a first vertically extending electrical connecting section on the conductive layer and not above the electrode;
- and
- forming a hole in the semiconductor element so that part of a surface of the conductive layer on the side of the semiconductor element is exposed as a second electrical connecting section,
- wherein the step of stacking the first and second semiconductor devices includes electrically connecting the first electrical connecting section of the first semiconductor device to the second electrical connecting section of the second semiconductor device.
7 more elements
A semiconductor device comprising:
- a semiconductor element;
- a conductive layer formed on a horizontal surface of the semiconductor element on which is formed an electrode which is electrically connected to the conductive layer;
- and
- a first vertically extending electrical connecting section formed on the conductive layer and not above the electrode;
- wherein a hole is formed in the semiconductor element so that part of a surface of the conductive layer on the side of the semiconductor element is exposed as a second electrical connecting section.
2 more elements
Dependencies are inferred from the claim text.