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US 6,642,591 B2Granted
Field-effect transistor
AssigneesAgency of Industrial Science and Technology, Shin-Ichi Ikeda, Hiroshi Bando, Eiichi Suzuki
InventorsShin-Ichi Ikeda, Naoki Shirakawa, Hiroshi Bando, Eiichi Suzuki
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Abstract
A field-effect transistor includes a silicon substrate on which is formed a channel region, a source region and a drain region. A gate insulation layer of a transition metal oxide having a perovskite structure is formed over at least the channel region, and a gate electrode is provided on the gate insulation layer.
Claims30
A field-effect transistor comprising:
- a silicon substrate;
- a channel region formed on the silicon substrate, with a source region at one end of the channel region and a drain region at another end of the channel region;
- a gate insulation layer of transition metal oxide formed at least on an upper surface of the channel region;
- and
- a gate electrode of a transition metal oxide formed on the gate insulation layer, wherein
- the gate electrode is formed of a transition metal oxide that has an electrical resistivity at room temperature that is not more than 100μΩ-cm.
3 more elements
A field-effect transistor having a double-gate MOS type structure comprising:
- a channel region;
- a source region and a drain region provided at each end of the channel region;
- one gate insulation layer formed at least on an upper surface of the channel region, another gate insulation layer formed at least on a lower surface of the channel region, each gate insulation layer being formed of a transition metal oxide;
- and
- a gate electrode provided on each of said gate insulation layers and formed of a transition metal oxide, wherein
- the gate electrode is formed of a transition metal oxide that has an electrical resistivity at room temperature that is not more than 100 μΩ-cm.
3 more elements
Dependencies are inferred from the claim text.