Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
Life of this patent
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Abstract
Methods for forming materials containing both zirconium and platinum, such as platinum-zirconium films, and articles containing such materials. The resultant films can be used as electrodes in an integrated circuit structure, particularly in a memory device such as a ferroelectric memory device. The platinum-zirconium materials can also be used in catalyst materials.
Claims45
A capacitor comprising:
- a first conductive layer;
- a dielectric material on at least a portion of the first conductive layer;
- and
- a second conductive layer on the dielectric material;
- wherein at least one of the first and second layers comprises a platinum-zirconia film.
An integrated Circuit comprising a capacitor, wherein the capacitor comprises:
- a first conductive layer;
- a dielectric material on at least a portion of the first conductive layer;
- and
- a second conductive layer on the dielectric material;
- wherein at least one of the first and second conductive layers comprises a platinum-zirconia film.
A memory cell comprising a transistor and a capacitor comprising:
- a first conductive layer;
- a dielectric material on at least a portion of the first conductive layer;
- and
- a second conductive layer on the dielectric material;
- wherein at least one of the first and second layers comprises a platinum-zirconia film.
A capacitor comprising:
- a first conductive layer;
- a dielectric material on at least a portion of the first conductive layer;
- and
- a second conductive layer on the dielectric material;
- wherein each of the first and second layers comprises a platinum-zirconium film.
An integrated circuit comprising a capacitor, wherein the capacitor comprises:
- a first conductive layer;
- a dielectric material on at least a portion of the first conductive layer;
- and
- a second conductive layer on the dielectric material;
- wherein each of the first and second conductive layers comprises a platinum-zirconium film.
A memory cell comprising a transistor and a capacitor comprising:
- a first conductive layer;
- a dielectric material on at least a portion of the first conductive layer;
- and
- a second conductive layer on the dielectric material;
- wherein each of the first and second layers each comprise a platinum-zirconium film.
A capacitor comprising:
- a first electrode;
- a dielectric material on at least a portion of the first electrode;
- and
- a second electrode on the dielectric material;
- wherein at least one of the first and second electrodes consists of a single layer comprising a platinum-zirconium film.
An integrated circuit comprising a capacitor, wherein the capacitor comprises:
- a first electrode;
- a dielectric material on at least a portion of the first electrode;
- and
- a second electrode on the dielectric material;
- wherein at least one of the first and second electrodes consists of a single layer comprising a platinum-zirconium film.
A memory cell comprising a transistor and a capacitor comprising:
- a first electrode;
- a dielectric material on at least a portion of the first electrode;
- and
- a second electrode on the dielectric material;
- wherein at least one of the first and second electrodes consists of a single layer comprising a platinum-zirconium film.
Dependencies are inferred from the claim text.