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US 6,642,561 B2Granted
Solid imaging device and method for manufacturing the same
AssigneeMinolta Co., Ltd.
InventorsTomokazu Kakumoto, Yoshio Hagihara
Life of this patent
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Abstract
A solid imaging device comprises a substrate including a semiconductor layer, a middle layer and a support layer, multiple pixels that each have a photoelectric conversion unit that includes a diffusion layer formed on the surface of the semiconductor layer, and insulating areas that are located such that they reach from the surface of the semiconductor layer to the middle layer and work together with the middle layer to electrically separate the pixels from each other.
Claims13
A solid imaging device comprising:
- a substrate including a semiconductor layer, a middle layer and a support layer;
- multiple pixels that each have a photoelectric converter that includes a diffusion layer formed on a surface of the semiconductor layer;
- and
- an insulating part that is located from the surface of the semiconductor layer to the middle layer, wherein the insulating part works together with the middle layer to electrically separate the pixels from each other,
- wherein the middle layer is formed using a semiconductor material having an opposite conductivity type from that of the semiconductor layer.
2 more elements
A solid imaging device comprising:
- a substrate including a semiconductor layer, a middle layer and a support layer;
- multiple pixels that each have a photoelectric converter that includes a diffusion layer formed on a surface of the semiconductor layer;
- and
- an insulating part that is located from the surface of the semiconductor layer to the middle layer, wherein the insulating part works together with the middle layer to electrically separate the pixels from each other,
- wherein the multiple pixels each comprise:
- first, second, third and fourth diffusion layers each having an opposite conductivity type from that of the semiconductor layer and are aligned on the surface of the semiconductor layer;
- a first insulating film located on the semiconductor layer between the first and second diffusion layers;
- a second insulating film located on the semiconductor layer between the third and fourth diffusion layers;
- a first electrode film located on the first insulating film;
- and
- a second electrode film located on the second insulating film;
- wherein the photoelectric converter comprises the second diffusion layer and the semiconductor layer and has a first electrode and a second electrode.
9 more elements
Dependencies are inferred from the claim text.