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AssigneeThe Whitaker Corporation
InventorsKenneth Vern Buer, Anthony Francis Quaglietta, Allen Hanson
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An isolation structure for high frequency integrated circuits is a conductive material disposed over a region of active gallium arsenide substrate. The conductive material over the active region creates a lossy RF path to reduce undesired coupling between adjacent conductors. In one case, two RF signal lines (1,2) terminated at the same via pad (3) have weaker coupling than in prior art via structures due to the lossy RF structure disposed on isolating fractional portions (10,11) of the via pad (3). The isolating fractional portion (10,11) are intermediate terminating fractional portions (8,9) of the via pad (3) to which the signal lines (1,2) are connected. In another case, two parallel bias lines (12,13) are disposed over an active layer region (6) increasing the RF loss between them and advantageously reducing the RF coupling. The reduced RF coupling improves RF isolation and permits increased miniaturization.
An RF isolation structure comprising:
A process for creating a microwave semiconductor RF isolation structure on a substrate comprising the steps of:
Dependencies are inferred from the claim text.