Stable high voltage semiconductor device structure
AssigneeIXYS Corporation
InventorNathan Zommer
Life of this patent
Estimating the term…
Abstract
A power integrated circuit device with multiple guard rings and field plates overlying regions between each of the guard rings. Each of the field plates form overlying a dielectric layer also between each of the guard rings. Multiple field plates can exist between each of such guard rings. At least one field plate couples to a main junction region, and another field plate couples to a peripheral region, typically a scribe line. The present power device structure with multiple guard rings and field plates provides a resulting guard ring structure which allows for such device to achieve higher voltage applications.
Claims19
A power device, comprising:
- a semiconductor substrate comprising a top surface with an active region, a guard ring region, and a peripheral region, the active region including a junction region;
- a first guard ring formed into the semiconductor substrate in the guard ring region provided between the active region and the peripheral region;
- a second guard ring formed into the semiconductor substrate in the guard ring region, the second guard ring being provided between the first guard ring and the active region;
- a dielectric layer overlying the top surface;
- and
- a field plate layer including a portion that overlies the dielectric layer, the field plate layer including a first floating field plate, a first fixed field plate, and a second fixed field plate, the first floating field plate being provided between the first and second fixed field plates.
A power device, comprising:
- a semiconductor substrate comprising a top surface with an active region, a guard ring region, and a peripheral region;
- a first guard ring formed into the semiconductor substrate in the guard ring region, the guard ring region being between the active region and the peripheral region;
- a second guard ring formed into the semiconductor substrate in the guard ring region, the second guard ring being provided between the first guard ring and the active region;
- a first fixed field plate electrically coupled to the first guard ring;
- a second fixed field plate electrically coupled to the second guard ring;
- and
- at least one floating field plate provided between the first and second fixed field plates.
A power device, comprising:
- a semiconductor substrate comprising a top surface with an active region, a guard ring region, and a peripheral region, the active region including a junction region;
- a plurality of guard rings formed into the semiconductor substrate in the guard ring region, the guard ring region being between the active region and the peripheral region, the plurality of guard rings comprising a first guard ring nearest to the junction region and a last guard ring nearest to the peripheral region;
- a dielectric structure overlying the top surface and including a first dielectric layer and a second dielectric layer;
- and
- a field plate structure having first and second fixed field plates electrically coupled to the first and last guard rings, respectively, and a plurality of floating field plates electrically isolated from the plurality of guard rings,
- wherein the plurality of floating field plates including a first floating field plate and a second floating field plate, the first floating field plate being provided on the first dielectric layer and the second floating field plate being provided on the second dielectric layer.
Dependencies are inferred from the claim text.