Method of forming a window for a gallium nitride light emitting diode
OwnerJohn Chen, Bingwen Liang +1inventors
InventorsJohn Chen, Bingwen Liang, Robert Shih
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Abstract
A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.
Claims14
A method of forming a light emitting diode comprising:
- providing a substrate;
- disposing a light emitting region on said substrate;
- forming a window structure on said light emitting region, including:
- forming a Mg+ doped window layer;
- forming a semi-transparent metal contact layer on said window layer;
- and
- forming a semi-transparent conductive amorphous current spreading layer on said contact layer;
- forming an opening through said contact layer and said current spreading layer;
- disposing a first electrode on said window structure, said first electrode comprising a layer of titanium formed on said current spreading layer and through said opening to contact said surface of said window layer;
- and
- disposing a second electrode on said window structure.
A method of forming a light emitting diode comprising:
- providing a substrate;
- disposing a light emitting region on said substrate;
- forming a window structure on said light emitting region, including:
- forming a Mg+ doped window layer;
- forming a semi-transparent NiOx/Au contact layer on said Mg+ doped window layer;
- and
- forming a semi-transparent conductive amorphous current spreading layer of indium tin oxide (ITO) on said contact layer;
- forming an opening through said contact layer and said current spreading layer;
- disposing a first electrode on said window structure, said first electrode comprising a layer of titanium formed on said current spreading layer and forming an ohmic connection therewith, said titanium of said first electrode being disposed through said opening to contact said surface of said window layer;
- and
- forming a Schottky diode connection between said first electrode and said Mg+ doped window layer.
A method of forming a light emitting diode comprising:
- providing a substrate;
- disposing a buffer region on said substrate;
- disposing a GaN substitute substrate layer on said buffer region;
- disposing a light emitting region on said substrate;
- forming a window structure on said light emitting region, including:
- forming a double window layer;
- forming a semi-transparent metal contact layer on said double window layer;
- and
- forming a semi-transparent conductive amorphous current spreading layer on said contact layer;
- forming an opening through said contact layer and said current spreading layer;
- and
- disposing a first electrode on said window structure, said first electrode comprising a layer of titanium formed on said current spreading layer, said titanium of said first electrode being disposed through said opening to contact said double window layer.
Dependencies are inferred from the claim text.