Nitride based semiconductor device and method of forming the same
AssigneeNEC Corporation
InventorsMasaru Kuramoto, Atsushi Yamaguchi
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Abstract
The present invention provides a semiconductor device comprising: a base layer made of a gallium nitride-based material; a cladding layer extending over the base layer; and an active layer extending over the cladding layer, and the active layer including at least a photo-luminescent layer of InxAlyGa1−x−yN (0<x<1, 0≦y≦0.2), wherein a standard deviation Δx of a microscopic fluctuation in an indium composition of the photo-luminescent layer is not more than 0.067, or wherein a standard deviation σ of a microscopic fluctuation in a band gap energy of the photo-luminescent layer is not more than 40 meV, or wherein a differential gain “dg/dn” of the active layer satisfies dg/dn≧1.0×10−20 (m2).
Claims64
A semiconductor device comprising:
- a base layer made of a gallium nitride-based material;
- a cladding layer extending over said base layer;
- and
- an active layer extending over said cladding layer, and said active layer including at least a photo-luminescent layer of InxAlyGa1−x−yN (0<x<1, 0≦y≦0.2),
- wherein a standard deviation Δx of a microscopic fluctuation in an indium composition of said photo-luminescent layer is not more than 0.067.
A semiconductor device comprising:
- a base layer made of a gallium nitride-based material;
- a cladding layer extending over said base layer;
- and
- an active layer extending over said cladding layer, and said active layer including at least a photo-luminescent layer of InxAlyGa1−x−yN (0<x<1, 0≦y≦0.2),
- wherein a standard deviation σ of a microscopic fluctuation in a band gap energy of said photo-luminescent layer is not more than 40 meV.
A semiconductor device comprising:
- a base layer made of a gallium nitride-based material;
- a cladding layer extending over said base layer;
- and
- an active layer extending over said cladding layer, and said active layer including at least a photo-luminescent layer of InxAlyGa1−x−yN (0<x<1, 0≦y≦0.2),
- wherein a differential gain “dg/dn” of said active layer satisfies dg/dn≧1.0×10−20 (m2).
A layered structure comprising:
- an active layer including at least a first layer of InxAlyGa1−x−yN (0<x<1, 0≦y≦0.2),
- wherein a standard deviation Δx of a microscopic fluctuation in an indium composition of said photo-luminescent layer is not more than 0.067.
A layered structure comprising:
- an active layer including at least a first layer of InxAlyGa1−x−yN (0<x<1, 0≦y≦0.2),
- wherein a standard deviation σ of a microscopic fluctuation in a band gap energy of said photo-luminescent layer is not more than 40 meV.
Dependencies are inferred from the claim text.