Film forming method and semiconductor device
AssigneesCanon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
InventorsYoshimi Shioya, Yuichiro Kotake, Youichi Yamamoto, Tomomi Suzuki, Hiroshi Ikakura, Shoji Ohgawara, Kouichi Ohira, Kazuo Maeda
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Abstract
There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
Claims20
A film forming method for forming an insulating film containing silicon on a substrate comprising converting a mixture of a gas of a compound having siloxane bonds and an oxidizing gas to a plasma and contacting the substrate with the plasma, whereby the gases react with each other to form the insulating film on the substrate, said insulating film having a dielectric constant which is lower than that of a silicon oxide film.
A film forming method using a parallel plate type plasma chemical vapor deposition apparatus in which an upper electrode and a lower electrode are provided opposing each other in a chamber, said method comprising:
- introducing a reaction gas containing (Si(CH3)3)2O and N2O into the chamber with a substrate therein;
- and
- applying high-frequency power to the electrodes to convert the reaction gas to a plasma, said plasma forming an insulating film containing silicon on the substrate, said insulating film having a dielectric constant which is lower than that of a silicon oxide film.
A film forming method using a parallel plate type plasma chemical vapor deposition apparatus in which an upper electrode and a lower electrode are provided opposing each other in a chamber and spaced apart more than 25 mm, said method comprising:
- introducing a reaction gas containing (Si(CH3)3)2O and N2O into the chamber with a substrate therein;
- and
- applying high-frequency power to only the upper electrode to convert the reaction gas to a plasma, said plasma forming an insulating film containing silicon on the substrate, said insulating film having a dielectric constant which is lower than that of a silicon oxide film.
A film forming method for forming an insulating film containing silicon on a substrate comprising converting a gaseous admixture of a gas of a Si(OR)nHm compound (where R is an alkyl group, n and m denote integers satisfying n+m=4 and m≧†0) and an oxidizing gas to a plasma and contacting the substrate with the plasma, whereby the gases react with each other to form the insulating film on the substrate.
Dependencies are inferred from the claim text.