Method for forming heavy nitrogen-doped ultra thin oxynitride gate dielectrics
AssigneeInternational Business Machines Corporation
InventorsEvgeni Gousev, Atul C. Ajmera, Christopher P. D'Emic
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Abstract
A method for forming an ultra thin gate dielectric for an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes forming an initial nitride layer upon a substrate by rapidly heating the substrate in the presence of an ammonia (NH3) gas, and then re-oxidizing the initial nitride layer by rapidly heating the initial nitride layer in the presence of a nitric oxide (NO) gas, thereby forming an oxynitride layer. The oxynitride layer has a nitrogen concentration therein of at about 1.0×1015 atoms/cm2 to about 6.0×1015 atoms/cm2, and has a thickness which may be controlled within a sub 10 Å range.
Claims11
A method for forming a gate dielectric for an integrated circuit device, the method comprising:
- forming an initial nitride layer upon a substrate by rapidly heating said substrate in the presence of an ammonia (NH3) gas;
- and
- re-oxidizing said initial nitride layer, thereby forming an oxynitride layer;
- wherein said oxynitride layer has a nitrogen concentration therein of at least 1.0×1015 atoms/cm2, and a thickness of about 5 Å to about 20 Å.
A method for forming a nitrogen-doped, ultra thin gate dielectric, the method comprising:
- preparing a hydrogen-terminated, oxide-free silicon substrate surface for formation of the dielectric thereupon;
- forming an initial nitride layer upon said substrate surface by rapidly heating said substrate surface in the presence of an ammonia (NH3) gas;
- re-oxidizing said initial nitride layer by rapidly heating said initial nitride layer in the presence of a nitric oxide (NO) gas, thereby forming an oxynitride layer;
- wherein said wherein said oxynitride layer has a nitrogen concentration therein of at least 1.0×1015 atoms/cm2.
Dependencies are inferred from the claim text.