Method for avoiding unetched polymer residue in anisotropically etched semiconductor features
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Fu Chang, Yu-Chun Huang
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Abstract
A method for plasma treating an anisotropically etched semiconductor feature with improved removal of residual polymeric material including providing a semiconductor wafer having an anisotropically etched feature opening further including an edge portion defining a diameter of the anisotropically etched feature opening the anisotropically etched feature opening further comprising polymeric material disposed within the anisotropically etched feature opening; plasma treating the at least one opening with an oxygen containing plasma to substantially remove the polymeric material including removing a portion of the edge portion.
Claims20
A method for plasma treating a resinous plug containing dual damascene opening with improved removal of polymeric material including residual via fences comprising the steps of:
- providing a semiconductor wafer comprising a via opening extending through at least one IMD layer in closed communication with an underlying etch stop layer further comprising a resinous via plug formed to fill the via opening to a level about equal to a bottom portion of a subsequently formed overlying trench line opening;
- etching the trench line opening overlying and encompassing the via opening to form a dual damascene opening comprising an edge portion defining a diameter of a remaining portion of the via opening;
- and,
- plasma treating the dual damascene opening with an oxygen containing plasma to substantially remove the resinous via plug including residual polymeric material while simultaneously removing a portion of the edge portion to form a faceted via opening portion having a larger diameter at an upper portion of the via opening.
A method for plasma treating a dual damascene opening for improved removal of residual polymeric material comprising the steps of:
- providing a semiconductor wafer comprising a via opening extending through at least one IMD layer to form closed communication with an etch stop layer overlying a conductive region;
- forming a plug of polymeric resin according to a spin coating and etchback process to at least partially fill the via opening;
- etching a trench line opening overlying and encompassing the via opening to form a dual damascene opening;
- plasma treating the dual damascene opening with a plasma formed from a plasma source gas comprising oxygen to substantially remove the plug and residual polymeric material from the dual damascene opening including removing a portion of a via opening edge portion defining the via opening to form a larger diameter via opening in an upper via opening portion while leaving at least a portion of the etch stop layer in place;
- and, etching through a remaining portion of the etch stop layer to form closed communication with the underlying conductive region.
Dependencies are inferred from the claim text.