Method of depositing copper seed on semiconductor substrates

A method for depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features, the method comprising:

• (a) depositing a first portion of the metal seed layer on the wafer substrate via plasma deposition, wherein:
• the first portion includes bottom coverage in each of the plurality of recessed device features that is between about 20 and 100 percent as thick as part of the first portion of the seed layer on the field of the wafer substrate;
• the first portion is deposited using metal ions generated in a plasma;
• and
• the first portion is deposited using a first ratio of wafer substrate RF bias to DC source power that is low enough to inhibit re-sputtering;
• and
• (b) after depositing the first portion of the metal seed layer, depositing a second portion of the metal seed layer while simultaneously redistributing at least part of the first portion on the bottom of each of the plurality of recessed device features to the corresponding sidewalls of each of the plurality of recessed features, wherein:
• the second portion is deposited using a second ratio of wafer substrate RF bias to DC source power that is higher than the first ratio of wafer substrate RF bias to DC source power such that re-sputtering is not inhibited.