Method of producing semiconductor device
AssigneeSony Corporation
InventorChigusa Yamane
Life of this patent
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Abstract
A method of producing a semiconductor device able to prevent a change of shape of a contact hole and to form a contact having a low resistivity and low variability in resistivity, comprising the steps of: forming a conductive layer in a substrate; forming an insulating layer on the conductive layer; forming an opening used as the contact hole in the insulating layer to penetrate and reach the conductive layer; and removing native oxide formed on a surface of the conductive layer at a bottom of the opening by plasma etching and using an etching gas containing a fluorine compound gas at a predetermined concentration in a predetermined pressure wherein the concentration and pressure are determined within a range able to control an etching amount of the native oxide.
Claims15
A method of producing a semiconductor device comprising the steps of:
- forming a conductive layer in a substrate;
- forming a conductive layer on an insulating layer;
- forming an opening used as a contact hole in the insulating layer to penetrate the insulating layer and reach the conductive layer;
- forming an interconnector layer in the opening in situ after forming the opening;
- and
- removing native oxide formed on a surface of the conductive layer at a bottom of the opening by plasma etching using an etching gas containing a fluorine compound gas at a predetermined concentration and a predetermined pressure, the concentration and pressure being determined within a range able to control an etching amount of the native oxide and the fluorine compound gas comprising nitrogen trifluoride (NE3) gas.
A method of producing a semiconductor device comprising the steps of:
- forming a conductive layer in a substrate;
- forming a conductive layer on an insulating layer:
- forming an opening used as a contact hole in the insulating layer to penetrate the insulating layer and reach the conductive layer;
- forming an interconnector layer in the opening after forming the opening;
- and
- removing native oxide formed on a surface of the conductive layer at a bottom of the opening by plasma etching using an etching gas comprising nitrogen trifluoride (NF3) gas at a predetermined concentration and a predetermined pressure, the concentration and pressure are determined within a range able to control an etching amount of the native oxide, an upper limit of the predetermined concentration of the NF3 gas is being about 6%.
A method of producing a semiconductor device comprising the steps of:
- forming a conductive layer in a substrate;
- forming a conductive layer on an insulating layer;
- forming an opening used as a contact hole in the insulating layer to penetrate the insulating layer and reach the conductive layer;
- forming an interconnector layer in the opening after forming the opening;
- and
- removing native oxide formed on a surface of the conductive layer at a bottom of the opening by plasma etching using an etching gas containing a fluorine compound gas at a predetermined concentration and a predetermined pressure wherein,
- the concentration and pressure are determined within a range able to control an etching amount of the native oxide, and
- the etching amount is equivalent to about 0.5 to 3 nm of a thermal oxide film.
Dependencies are inferred from the claim text.