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US 6,642,138 B2Granted
Process of making dual damascene structures using a sacrificial polymer
AssigneeSharp Laboratories of America, Inc.
InventorsWei Pan, Sheng Teng Hsu
Life of this patent
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Abstract
A method is provided to deposit and pattern a sacrificial polymer, and form metal layers. A double hard mask is used to pattern and etch the sacrificial polymer. The double hard mask may be formed at temperatures below 400° C. The sacrificial polymer is capable of being decomposed to become air gaps during annealing.
Claims17
A method making dual damascene structures comprising the steps of:
- a) forming a sacrificial layer comprising a sacrificial polymer over an oxide layer;
- b) depositing a first hard mask at a temperature below 400 degrees Celsius over the sacrificial layer;
- c) depositing as a second hard mask at a temperature below 400 degrees Celsius over the first hard mask;
- d) depositing and patterning a photoresist via pattern;
- e) etching the second hard mask to form a via in the second hard mask;
- f) etching the first hard mask to extend the via through the first hard mask;
- g) depositing and patterning a photoresist line pattern;
- h) etching the second hard mask to form a line in the second hard mask;
- i) etching the sacrificial layer using the first hard mask as a via mask, whereby the via extends through the sacrificial layer;
- j) etching the first hard mask using the second hard mask as a line mask, whereby the line extends through the first hard mask;
- and
- k) etching off the second hard mask and etching into the oxide layer.
- 2., The method of claim 1, wherein the step of forming the sacrificial layer further comprises spin coating.
10 more elements
Dependencies are inferred from the claim text.