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US 6,642,131 B2Granted
Method of forming a silicon-containing metal-oxide gate dielectric by depositing a high dielectric constant film on a silicon substrate and diffusing silicon from the substrate into the high dielectric constant film
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorYoshinao Harada
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Abstract
A gate electrode is formed on a substrate via a gate insulating film. The gate insulating film includes a high dielectric constant film containing a metal, oxygen and hydrogen, and a lower barrier film formed below the high dielectric constant film and containing a metal, oxygen, silicon and nitrogen.
Claims26
A method for producing a semiconductor device comprising the steps of:
- forming a high dielectric constant film containing a metal, oxygen and a predetermined substance on a substrate;
- performing a heat treatment with respect to the high dielectric constant film to diffuse silicon from the side of the substrate into vacancies left by the predetermined substance in the high dielectric constant film, thereby forming a silicon-containing high dielectric constant film;
- and
- forming a conductive film for serving as a gate electrode on the silicon-containing high dielectric constant film.
1 more element
A method for producing a semiconductor device comprising the steps of:
- forming a high dielectric constant film containing a metal, oxygen and hydrogen on a substrate;
- performing a heat treatment with respect to the high dielectric constant film to diffuse silicon from the side of the substrate into vacancies left by the hydrogen in the high dielectric constant film, thereby forming a silicon-containing high dielectric constant film;
- and
- forming a conductive film for serving as a gate electrode on the silicon-containing high dielectric constant film.
1 more element
Dependencies are inferred from the claim text.