Semiconductor circuit
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTomohide Terashima
Life of this patent
Estimating the term…
Abstract
A semiconductor circuit is provided which has a high breakdown voltage and is capable of outputting a large current. Field transistors (Q1, Q11) are cross-coupled. The gate of the first field transistor (Q1) and the drain of the second field transistor (Q11) are not directly connected to the drain of an MOS transistor (Q4) but are connected to the base of a bipolar transistor (Q12). The second field transistor (Q11) has its source connected to the collector of the bipolar transistor (Q12) and the MOS transistor (Q4) has its drain connected to the emitter of the bipolar transistor (Q12). When the current amplification factor of the bipolar transistor (Q12) is taken as β, then the current of the output (SO) can be increased approximately β times.
Claims19
A semiconductor circuit, comprising:
- a P-type first field transistor having a source, a drain, and a gate;
- a P-type second field transistor having a source, a drain, and a gate;
- an N-type first MOS transistor having a source, a drain, and a gate;
- an N-type second MOS transistor having a source, a drain, and a gate;
- and
- an NPN-type first bipolar transistor having a collector, a base, and an emitter, wherein
- a potential which is higher than both of a potential applied to said source of said first MOS transistor and a potential applied to said source of said second MOS transistor is applied to said source of said first field transistor, said source of said second field transistor, and said collector of said first bipolar transistor,
- said drain of said first field transistor and said drain of said first MOS transistor are connected to said gate of said second field transistor,
- said drain of said second field transistor is connected to said gate of said first field transistor and said base of said first bipolar transistor,
- an output signal is obtained at a connection point at which said drain of said second MOS transistor and said emitter of said first bipolar transistor are connected in common, and
- signals which are complementary to each other are inputted respectively to said gate of said first MOS transistor and said gate of said second MOS transistor.
A semiconductor circuit, comprising:
- a P-type first field transistor having a source, a drain, and a gate;
- a P-type second field transistor having a source, a drain, and a gate;
- an N-type first MOS transistor having a source, a drain, and a gate;
- an N-type second MOS transistor having a source, a drain, and a gate;
- an NPN-type first bipolar transistor having a collector, a base, and an emitter;
- and
- a PNP-type second bipolar transistor having a collector, a base, and an emitter, wherein
- a potential which is higher than both of a potential applied to said source of said first MOS transistor and a potential applied to said source of said second MOS transistor is applied to said source of said first field transistor and said emitter of said second bipolar transistor,
- said source of said second field transistor is connected to said emitter of said second bipolar transistor or said base of said second bipolar transistor,
- said drain of said first field transistor and said drain of said first MOS transistor is connected to said gate of said second field transistor,
- said drain of said second field transistor is connected to said gate of said first field transistor, said base of said first bipolar transistor, and said collector of said second bipolar transistor, and
- said collector of said first bipolar transistor and said base of said second bipolar transistor are connected to each other.
A semiconductor circuit, comprising:
- a P-type first field transistor having a source, a drain, and a gate;
- a P-type second field transistor having a source, a drain, and a gate;
- an N-type first MOS transistor having a source, a drain, and a gate;
- an N-type second MOS transistor having a source, a drain, and a gate;
- and
- a PNP-type first bipolar transistor having a collector, a base, and an emitter;
- wherein
- a potential which is higher than both of a potential applied to said source of said first MOS transistor and a potential applied to said source of said second MOS transistor is applied to said source of said first field transistor, said source of said second field transistor, and said emitter of said first bipolar transistor,
- said drain of said first field transistor and said drain of said first MOS transistor are connected to said gate of said second field transistor,
- said drain of said second field transistor is connected to said gate of said first field transistor and said collector of said first bipolar transistor, and
- said source of said second field transistor is connected to said base of said first bipolar transistor.
Dependencies are inferred from the claim text.