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US 6,642,119 B1Granted
Silicide MOSFET architecture and method of manufacture
AssigneeAdvanced Micro Devices, Inc.
InventorsMario M. Pelella, Shankar Sinha, Simon S. Chan
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Abstract
The present invention relates to a method of forming a transistor and a transistor structure. The invention comprises forming the transistor using a double silicide process which reduces resistance and reduces the floating-body-effect when employed in conjunction with SOI type device architecture.
Claims16
A method of forming a transistor, comprising:
- forming a gate structure having lateral edges associated therewith over a semiconductor substrate by patterning a gate material using a mask structure overlying a top portion thereof;
- forming first sidewall spacers on the lateral edges of the gate structure;
- forming extension regions in the semiconductor substrate that are self-aligned with respect to the gate structure;
- forming a first silicide on the extension regions, wherein the first silicide does not form on the gate structure due to the mask structure residing thereon;
- forming second sidewall spacers on the lateral edges of the gate structure and covering the first sidewall spacers;
- forming a source region and a drain region under the extension regions, respectively, the source and drain regions being formed via implantation through the first silicide on the extension regions;
- and
- forming a second silicide on the first silicide and on a top portion of the gate structure after forming the source and drain regions.
5 more elements
A method of forming a transistor, comprising:
- forming a gate structure having lateral edges associated therewith over a semiconductor substrate by patterning a gate material using a mask structure overlying a top portion thereof;
- forming first sidewall spacers on the lateral edges of the gate structure;
- forming source and drain regions in the semiconductor substrate that are self-aligned with respect to the gate structure with an extension region implant;
- forming a first silicide on the source and drain regions, wherein the first silicide does not form on the gate structure due to the mask structure residing thereon;
- forming second sidewall spacers on the lateral edges of the gate structure and covering the first sidewall spacers;
- and
- forming a second silicide on the first silicide and on a top portion of the gate structure after forming the source and drain regions.
4 more elements
Dependencies are inferred from the claim text.