Method for eliminating polysilicon residue by fully converting the polysilicon into silicon dioxide
AssigneeMactronix International Co., Ltd.
InventorsChun-Lien Su, Chun-Chi Wang, Ming-Shang Chen
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Abstract
A method for eliminating polysilicon residue is provided by converting the polysilicon residue into silicon dioxide in two steps. A tilted ion implantation step is performed to implant oxygen ions into the polysilicon residue to rich oxygen containing of the polysilicon residue. An oxygen anneal step is subsequently performed to completely convert the rich oxygen containing polysilicon residue into silicon dioxide that can eliminate the conductivity of the polysilicon residue and prevent oxygen encroachment occurring.
Claims8
A method for eliminating polysilicon residue on a sidewall, comprising the steps of:
- performing a tilted ion implantation step to implant oxygen ion into the polysilicon residue on the sidewall;
- and
- performing an oxygen anneal step to fully convert the polysilicon residue into a silicon dioxide.
A method for eliminating polysilicon residue adapted for a semiconductor substrate including a plurality of parallel word lines, the polysilicon residue is on the sidewall of an insulating layer between two word lines and connected the word lines, comprising the steps of:
- performing a tilted ion implantation step to implant oxygen ions into the polysilicon residue on the sidewall;
- and
- performing an oxygen anneal step to fully convert the polysilicon residue into a silicon dioxide.
Dependencies are inferred from the claim text.