Method for increasing core gain in flash memory device using strained silicon

Abstract

A method of memory device fabrication. In one embodiment, the method of memory device (400) fabrication comprises implanting an element (200) in a substrate (440). The element (200) causes an inherent elongational realignment of atoms in silicon (101,102) when silicon (100) is formed (471) upon the substrate (440) with the element (200) implanted therein. A layer of silicon (100) is formed (471) on the substrate having the element (200) implanted therein (470), wherein alignment of atoms (101) of the silicon elongates (102) to an atomical alignment equivalent (101g) to said element (200). The layer of silicon (471) and the substrate (470) are crystallized subsequent to the elongational realignment of atoms of the layer of silicon (101g), wherein a crystallized layer of elongated silicon (101g) decreases electron scattering thus realizing increase core gain in the memory device (400).

Dependencies are inferred from the claim text.