Barrier material encapsulation of programmable material
AssigneeIntel Corporation
InventorDaniel Xu
Life of this patent
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AssigneeIntel Corporation
InventorDaniel Xu
Estimating the term…
A method comprising forming as stacked materials on a substrate, a volume of programmable material and a signal line, conformably forming a first dielectric material on the stacked materials, forming a second dielectric material on the first material, etching an opening in the second dielectric material with an etchant that, between the first dielectric material and the second dielectric material, favors removal of the second dielectric material, and forming a contact in the opening to the stacked materials. An apparatus comprising a contact point formed on a substrate, a volume of programmable material formed on the contact point, a signal line formed on the volume of programmable material, a first dielectric material conformally formed on the signal line, a different second dielectric material formed on the first dielectric material, and a contact formed through the first dielectric material and the second dielectric material to the signal line.
A method comprising:
A method comprising:
A method, comprising:
The method of claim 19, further comprising selectively removing a portion of the second passivation layer by using a selective etchant that removes the second passivation layer and when the selective etchant encounters the first passivation layer, etching stops or is significantly slowed.
Dependencies are inferred from the claim text.