Methods of fabricating semiconductor devices with barrier layers
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSeok-Woo Lee
Life of this patent
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Abstract
The present invention relates to semiconductor device and a fabricating methods thereof which enable to improve device characteristics such as threshold voltage and the like by preventing p type impurities doping a gate from penetrating into a channel region of a substrate through a SiO2 layer. The present invention also relates to preventing transconductance due to reciprocal reaction of traps from decreasing by re-oxidation, wherein a first and a second oxynitride layer are formed at a first interface between a SiO2 layer and a gate of p-doped polysilicon and a second interface between the SiO2 layer and a silicon substrate, respectively.
Claims24
A method of fabricating a gate insulating layer in a semiconductor device, comprising:
- forming an insulating layer on a semiconductor substrate;
- forming a first barrier layer at an interface between the semiconductor substrate and the insulating layer;
- forming a semiconductor layer on the insulating layer;
- and
- forming a second barrier layer at an interface between the semiconductor layer and the insulating layer, wherein the first and second barrier layers are formed of oxynitride layers.
A method of fabricating a semiconductor device, comprising:
- forming an insulating layer on a semiconductor substrate;
- forming a first barrier layer at an interface between the semiconductor substrate and the insulating layer;
- forming a semiconductor layer on the insulating layer;
- forming a second barrier layer at an interface between the semiconductor layer and the insulating layer, wherein the formation of the second barrier layer comprises:
- forming a nitrogen donating layer on the semiconductor layer;
- doping the semiconductor layer beneath the nitrogen donating layer with a dopant through the nitrogen donating layer, and
- forming an oxynitride layer as the second diffusion barrier layer at the interface between the insulating and semiconductor layers;
- forming a gate electrode by patterning the semiconductor layer;
- and
- forming impurity regions around the gate electrode in the substrate.
A method of fabricating a gate insulating layer in a semiconductor device, comprising:
- forming a silicon oxide insulating layer on a semiconductor substrate;
- forming a first barrier layer at an interface between the semiconductor substrate and the silicon oxide insulating layer;
- forming a semiconductor layer on the silicon oxide insulating layer;
- forming a nitrogen donating layer on the semiconductor layer;
- and
- forming a second barrier layer at an interface between the semiconductor layer and the silicon oxide insulating layer.
Dependencies are inferred from the claim text.