Thin-film semiconductor device and apparatus for fabricating thin-film semiconductor device
AssigneeNEC Corporation
InventorHiroshi Tanabe
Life of this patent
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Abstract
There is provided a method of fabricating a thin-film semiconductor device, including the steps of (a) melting and recrystallizing at least a surface of a thin semiconductor film formed on a substrate, in a pressure lower than an atmospheric pressure or in inert gas atmosphere, (b) keeping the substrate in atmosphere including oxygen gas, and (c) forming an insulating film on the thin semiconductor film with the substrate being kept in a pressure lower than an atmospheric pressure or inert gas atmosphere.
Claims25
method of fabricating a thin-film semiconductor device, comprising the steps of:
- (a) melting and recrystallizing at least a surface of a thin semiconductor film formed on a substrate, in a pressure lower than an atmospheric pressure or in inert gas atmosphere;
- (b) keeping said substrate in atmosphere including oxygen gas;
- and
- (c) forming an insulating film on said thin semiconductor film with said substrate being kept in a pressure lower than an atmospheric pressure or inert gas atmosphere.
method of fabricating a thin-film semiconductor device, comprising the steps, in sequence, of:
- (a) introducing a substrate into a vacuous chamber;
- (b) introducing non-reactive gas into said chamber;
- (c) radiating laser beam to said substrate in said chamber;
- (d) introducing oxygen gas into said chamber;
- (e) exhausting said non-reactive gas and said oxygen gas until a pressure in said chamber is reduced down to a predetermined pressure;
- and
- (f) taking said substrate out of said chamber.
A method of fabricating a thin-film semiconductor device, comprising:
- introducing a substrate into a vacuum chamber;
- introducing a non-reactive gas into said vacuum chamber, such that, a first pressure of 700 Torr or greater is attained;
- irradiating a portion of said substrate in said vacuum chamber with a laser beam;
- stopping of said introducing of said non-reactive gas into said vacuum chamber;
- after irradiating said portion of said substrate and said stopping of said introducing of said non-reactive gas, introducing oxygen gas into said chamber, such that, said vacuum chamber maintains said first pressure;
- and
- transferring said substrate from said vacuum chamber into a processing chamber having a second pressure equal to said first pressure.
Dependencies are inferred from the claim text.