Semiconductor device and fabrication method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideomi Suzawa, Koji Ono, Yoshihiro Kusuyama
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Abstract
For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.
Claims18
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- forming a gate insulating film on said semiconductor layer;
- forming a first conductive film, a second conductive film, and a third conductive film on said gate insulating film;
- etching said first conductive film, said second conductive film, and said third conductive film to thereby form a first gate electrode comprising a first electrode, a second electrode and a third electrode;
- doping an n-type impurity element into said semiconductor layer in a self-aligned manner with said first gate electrode as a mask;
- etching said first electrode, said second electrode, and said third electrode to thereby form a second gate electrode comprising a fourth electrode, a fifth electrode and a sixth electrode;
- and
- doping an n-type impurity element into said semiconductor layer with said second gate electrode as a mask.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- forming a gate insulating film on said semiconductor layer;
- forming a first conductive film, a second conductive film, and a third conductive film on said gate insulating film;
- etching said first conductive film, said second conductive film, and said third conductive film to thereby form a first gate electrode comprising a first electrode, a second electrode and a third electrode;
- doping an n-type impurity element into said semiconductor layer in a self-aligned manner with said first gate electrode as a mask to form a n-type impurity region (A);
- etching said first electrode, said second electrode, and said third electrode to thereby form a second gate electrode comprising a fourth electrode, a fifth electrode and a sixth electrode;
- and
- doping an n-type impurity element into said semiconductor layer with said second gate electrode as a mask to form n-type impurity region (B).
A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor layer on an insulating surface;
- forming a gate insulating film on said semiconductor layer;
- forming a first conductive film, a second conductive film, and a third conductive film on said gate insulating film;
- etching said first conductive film, said second conductive film, and said third conductive film to thereby form a first gate electrode comprising a first electrode, a second electrode and a third electrode;
- doping an n-type impurity element into said semiconductor layer in a self-aligned manner with said first gate electrode as a mask to form a n-type impurity region (A) comprising said n-type impurity element at a concentration of 1×1020 to 1×1022/cm3;
- etching said first electrode, said second electrode, and said third electrode to thereby form a second gate electrode comprising a fourth electrode, a fifth electrode and a sixth electrode;
- and
- doping an n-type impurity element into said semiconductor layer with said second gate electrode as a mask to form n-type impurity region (B) comprising said n-type impurity element at a concentration of 1×1017 to 1×1020/cm3.
Dependencies are inferred from the claim text.