Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsHidetoshi Nozaki, Ikuko Inoue, Hirofumi Yamashita
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Abstract
A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.
Claims12
A method of manufacturing a solid state imaging device, comprising the steps of:
- forming a first insulating film on a semiconductor substrate of a first conductivity type;
- selectively forming an element isolation region for separating an element region in the semiconductor substrate;
- forming a readout gate electrode on the element region with the first insulating film interposed therebetween and a gate electrode on the element isolation region with the first insulating film interposed therebetween;
- forming a diffusion region of a second conductivity type on a surface of the element region at one end of the readout gate electrode;
- forming a signal storage region of the second conductivity type on the surface of the element region at other end of the readout gate electrode;
- forming a second insulating film on an entire surface of a resultant structure;
- removing the second insulating film and forming a silicide block layer covering at least part of the signal storage region;
- forming a surface shield region of the first conductivity type on a surface of the signal storage region;
- removing the first insulating film and the second insulating film from the diffusion region to expose a surface of the diffusion region;
- and
- forming a metal silicide layer on the exposed surface of the diffusion region.
A method of manufacturing a solid state imaging device, comprising the steps of:
- forming a first insulating film on a semiconductor substrate of a first conductivity type;
- selectively forming an element isolation region for separating an element region in the semiconductor substrate;
- forming a readout gate electrode on the element region with the first insulating film interposed therebetween;
- forming a diffusion region of a second conductivity type on a surface of the element region at one end of the readout gate electrode;
- forming a signal storage region of the second conductivity type on the surface of the element region at other end of the readout gate electrode;
- and
- forming a surface shield region of the first conductivity type by selectively epitaxial-growing a silicon layer of the signal storage region.
A method of manufacturing a solid state imaging device, comprising the steps of:
- forming a first insulating film on a semiconductor substrate of a first conductivity type;
- selectively forming an element isolation region for separating an element region in the semiconductor substrate;
- forming a readout gate electrode on the element region with the first insulating film interposed therebetween;
- forming a diffusion region of a second conductivity type on a surface of the element region at one end of the readout gate electrode;
- forming a signal storage region of the second conductivity type on the surface of the element region at other end of the readout gate electrode;
- forming a selective growth silicon layer by selectively epitaxial-growing a silicon layer of the signal storage region and the diffusion region;
- forming a surface shield region of the first conductivity type in the selective growth silicon layer on the signal storage region;
- forming a second insulating film on an entire surface of a resultant structure;
- removing the second insulating film so as to expose at least a surface of the selective growth silicon layer on the diffusion region and forming a silicide block layer covering at least part of the signal storage region;
- and
- forming a metal silicide layer on the exposed surface of the selective growth silicon layer on the diffusion region.
Dependencies are inferred from the claim text.