Asymmetrical reset transistor with double-diffused source for CMOS image sensor

A method to form CMOS image sensors in the manufacture of an integrated circuit device comprising:

• providing a semiconductor substrate;
• forming shallow trench isolation regions in said semiconductor substrate;
• forming sensor diodes in said semiconductor substrate each comprising a first terminal and a second terminal;
• forming gates for transistors in said CMOS image sensors wherein said gates comprise a conductor layer overlying said semiconductor substrate with an insulating layer therebetween and wherein said transistors include reset transistors;
• implanting ions into said semiconductor substrate to form source/drain regions for said transistors wherein said source regions of said reset transistors are formed in said first terminals of said sensor diodes;
• and
• implanting ions into said reset transistor sources to form double diffused sources wherein said implanting is blocked from other said source/drain regions.