Method for manufacturing semiconductor laser device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTohru Takiguchi
Life of this patent
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Abstract
On a laminate containing a p-InGaAsP layer, one of layers including a diffraction grating layer, an SiO2 insulating film pattern that has first rectangular openings, each opening having a long side orthogonal with the direction of the optical wave guide, periodically arranged at intervals in the direction of the optical wave guide is formed. An SiN insulating film pattern having a second opening with a strip shape having a width narrower than the long side of the first opening, extending in the direction of the optical wave guide, is formed on the SiO2 insulating film pattern. The laminate containing the p-InGaAsP layer is dry-etched using the SiO2 insulating film pattern and the SiN insulating film pattern as masks, and methane and a hydrogen plasma as the etching media.
Claims6
A method for manufacturing a semiconductor laser device comprising:
- sequentially laminating on a semiconductor substrate of a first conductivity type, a first cladding layer of a first conductivity type, an active layer, a first second cladding layer of a second conductivity type, a semiconductor layer of the second conductivity type with an index of refraction different from the index of refraction of the second cladding layer, and a second second cladding layer of the second conductivity type;
- forming a first insulating film of a Si-based substance on the second second cladding layer, and forming, with the first insulating film, a first insulating film pattern with a plurality of first openings which have a strip shape having a length in a direction intersecting an optical wave guide, and arranged at an interval having a predetermined distance along the optical wave guide;
- forming a second insulating film of a Si-based substance over the semiconductor substrate through the first insulating film pattern, and forming with the second insulating film, through the first insulating film pattern, a second insulating film pattern with a second opening which has a strip shape extending along the optical wave guide, and which has a width narrower than the length of the first opening in the direction intersecting the optical wave guide;
- etching the second second cladding layer and the semiconductor layer using the second insulating film pattern and the first insulating film pattern as masks to form a third opening passing through the semiconductor layer;
- and
- removing the second insulating film pattern and the first insulating film pattern, and filling the second second cladding layer and the semiconductor layer through the third opening with a third second cladding layer of the second conductivity type.
Dependencies are inferred from the claim text.