Semiconductor circuit and method of fabricating the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Toru Takayama, Yasuhiko Takemura
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Abstract
Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon film. This amorphous silicon film is selectively irradiated with laser light or other equivalent intense light to crystallize the amorphous silicon film.
Claims60
A method of manufacturing a thin film transistor comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- irradiating a laser light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material, thereby diffusing said crystallization promoting material in said semiconductor film;
- and
- patterning the crystallized semiconductor film to form a first semiconductor island and a second semiconductor island,
- wherein said first semiconductor island contains said crystallization promoting material at a concentration higher than said second semiconductor island.
A method of manufacturing a thin film transistor comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- irradiating a laser light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material thereby diffusing said crystallization promoting material in said semiconductor film, while heating said semiconductor film at a temperature of 100 to 450° C.;
- and
- patterning the crystallized semiconductor film to form a first semiconductor island and a second semiconductor island,
- wherein said first semiconductor island contains said crystallization promoting material at a concentration higher than said second semiconductor island.
A method of manufacturing a thin film transistor comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- irradiating a laser light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material, thereby diffusing said crystallization promoting material in said semiconductor film,
- wherein the crystallized semiconductor film contains said crystallization promoting material at a concentration 1×1019 atoms/cm3 or less,
- wherein a first region of the crystallized semiconductor film contains said crystallization promoting material at a concentration higher than a second region of the crystallized semiconductor region.
A method of manufacturing a thin film transistor comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- and
- irradiating a light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material, thereby diffusing said crystallization promoting material in said semiconductor film,
- wherein the crystallized semiconductor film contains said crystallization promoting material at a concentration 1×1019 atoms/cm3 or less,
- wherein a first region of the crystallized semiconductor film contains said crystallization promoting material at a concentration higher than a second region of the crystallized semiconductor region.
A method of manufacturing thin film transistors used in a driving circuit and an active matrix circuit of an active matrix display device, said method comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- and
- irradiating a laser light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material, thereby diffusing said crystallization promoting material in said semiconductor film,
- wherein the crystallized semiconductor film in said driving circuit contains said crystallization promoting material at a concentration higher than the crystallized semiconductor film in said active matrix circuit.
A method of manufacturing thin film transistors used in a driving circuit and an active matrix circuit of an active matrix display device, said method comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- and
- irradiating a laser light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material thereby diffusing said crystallization promoting material in said semiconductor film, while heating said semiconductor film at a temperature of 100 to 450° C.,
- wherein the crystallized semiconductor film in said driving circuit contains said crystallization promoting material at a concentration higher than the crystallized semiconductor film in said active matrix circuit.
A method of manufacturing thin film transistors used in a driving circuit and an active matrix circuit of an active matrix display device, said method comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- and
- irradiating a laser light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material, thereby diffusing said crystallization promoting material in said semiconductor film,
- wherein the crystallized semiconductor film contains said crystallization promoting material at a concentration 1×1019 atoms/cm3 or less,
- wherein the crystallized semiconductor film in said driving circuit contains said crystallization promoting material at a concentration higher than the crystallized semiconductor film in said active matrix circuit.
A method of manufacturing thin film transistors used in a driving circuit and an active matrix circuit of an active matrix display device, said method comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- and
- irradiating a light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material, thereby diffusing said crystallization promoting material in said semiconductor film,
- wherein the crystallized semiconductor film contains said crystallization promoting material at a concentration 1×1019 atoms/cm3 or less,
- wherein the crystallized semiconductor film in said driving circuit contains said crystallization promoting material at a concentration higher than the crystallized semiconductor film in said active matrix circuit.
A method of manufacturing thin film transistors used in a driving circuit and an active matrix circuit of an active matrix display device, said method comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- and
- irradiating a laser light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material, thereby diffusing said crystallization promoting material in said semiconductor film,
- wherein the crystallized semiconductor film in said driving circuit contains said crystallization promoting material at a concentration higher than the crystallized semiconductor film in said active matrix circuit,
- wherein the crystallized semiconductor film in said active matrix circuit contains said crystallization promoting material at a concentration of 1×1016 atoms/cm3 or less.
A method of manufacturing thin film transistors used in a driving circuit and an active matrix circuit of an active matrix display device, said method comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- and
- irradiating a laser light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material thereby diffusing said crystallization promoting material in said semiconductor film, while heating said semiconductor film at a temperature of 100 to 450° C.,
- wherein the crystallized semiconductor film in said driving circuit contains said crystallization promoting material at a concentration higher than the crystallized semiconductor film in said active matrix circuit,
- wherein the crystallized semiconductor film in said active matrix circuit contains said crystallization promoting material at a concentration of 1×1016 atoms/cm3 or less.
A method of manufacturing thin film transistors used in a driving circuit and an active matrix circuit of an active matrix display device, said method comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- and
- irradiating a laser light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material, thereby diffusing said crystallization promoting material in said semiconductor film,
- wherein the crystallized semiconductor film contains said crystallization promoting material at a concentration 1×1019 atoms/cm3 or less,
- wherein the crystallized semiconductor film in said driving circuit contains said crystallization promoting material at a concentration higher than the crystallized semiconductor film in said active matrix circuit,
- wherein the crystallized semiconductor film in said active matrix circuit contains said crystallization promoting material at a concentration of 1×1016 atoms/cm3 or less.
A method of manufacturing thin film transistors used in a driving circuit and an active matrix circuit of an active matrix display device, said method comprising the steps of:
- forming a semiconductor film on an insulating surface;
- introducing a crystallization promoting material into said semiconductor film;
- and
- irradiating a light to said semiconductor film to crystallize said semiconductor film after introducing said crystallization promoting material, thereby diffusing said crystallization promoting material in said semiconductor film,
- wherein the crystallized semiconductor film contains said crystallization promoting material at a concentration 1×1019 atoms/cm3 or less,
- wherein the crystallized semiconductor film in said driving circuit contains said crystallization promoting material at a concentration higher than the crystallized semiconductor film in said active matrix circuit,
- wherein the crystallized semiconductor film in the active matrix circuit contains the crystallization promoting material at a concentration of 1×1016 atoms/cm3 or less.
Dependencies are inferred from the claim text.