Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layer
AssigneeAdvanced Micro Devices, Inc.
InventorsArvind Halliyal, Farzad Arsania
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Abstract
An apparatus and a method of depositing a dielectric material film, including steps of initiating a process of depositing a dielectric material film under at least one controllable initial condition in an apparatus comprising a dielectric material deposition chamber and a spectroscopic ellipsometer; and measuring, by the spectroscopic ellipsometer, at least one ellipsometric parameter of the dielectric material film during the process of depositing the film.
Claims21
A method of depositing a dielectric material film on a semiconductor substrate, comprising:
- initiating a process of depositing a dielectric material film on a semiconductor substrate under at least one controllable initial condition in an apparatus comprising a dielectric material deposition chamber and a spectroscopic ellipsometer;
- and
- measuring in situ, by the spectroscopic ellipsometer, at least one ellipsometric parameter of the dielectric material film during the process of depositing the film.
A method for depositing a high-K dielectric material on a semiconductor substrate, comprising:
- providing an apparatus comprising both a device for depositing a dielectric material and a device configured to measure in situ at least one ellipsometric parameter relating to at least one of refractive index and dielectric constant of the dielectric material;
- placing a semiconductor substrate into the apparatus;
- depositing on the semiconductor substrate a film comprising a high-K dielectric material;
- measuring in situ, during the depositing step, the elipsometric parameter relating to at least one of refractive index and dielectric constant of the dielectric material film;
- and
- controlling, during the depositing step, at least one process parameter relating to the depositing step based on the ellipsometric parameter relating to at least one of refactive index and dielectric constant of the dielectric material film.
A method of depositing a dielectric material film on a semiconductor substrate, comprising:
- initiating a process of depositing a dielectric material film on the semiconductor substrate under at least one controllable initial condition in an apparatus comprising a dielectric material deposition chamber and a spectroscopic ellipsometer;
- measuring in situ, by the spectroscopic ellipsometer, at least one ellipsometric parameter of the dielectric material film during the process of depositing the film;
- and
- controlling, during the depositing step, the at least one controllable initial condition based on the elipsometric parameter relating to at least one of refractive index and dielectric constant of the dielectric material film.
Dependencies are inferred from the claim text.