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US 6,641,982 B2Granted
Methodology to introduce metal and via openings
AssigneeIntel Corporation
InventorAjay Jain
Life of this patent
Estimating the term…
Abstract
A method including forming a photoimageable material on a substrate; developing the photoimageable material over an opening area, the photoimageable material over a first portion of the opening area developed to a first extent and the photoimageable material over a second portion of the opening area developed to a different second extent; removing developed photoimageable material from the opening area; and forming an opening in the substrate in the opening area.
Claims22
A method comprising:
- forming a photoimageable material on a dielectric material overlying a contact point;
- developing the photoimageable material over an opening area, the photoimageable material over a first portion of the opening area developed to a first extent and the photoimageable material over a second portion of the opening area developed to a lesser second extent;
- forming an opening in the dielectric material about the opening area to a depth equivalent to the thickness of the dielectric layer less an effective thickness for an opening about a second opening area;
- removing photoimageable material over the second portion of the opening area;
- after removing the photoimageable material, forming an opening in the dielectric material to the contact point about the opening area and forming an opening in the dielectric material about the second opening area;
- and
- after forming the opening in the dielectric material to the contact point and the opening in the dielectric material about the second opening area, forming an interconnect coupled to the contact point.
4 more elements
A method comprising:
- forming a photoimageable material over a dielectric material on a substrate;
- developing the photoimageable material by exposing the photoimageable material to a light source through an exposure mask;
- defining an opening in the photoimageable material, the opening comprising a first opening portion exposing the dielectric material therethrough and a second portion less than completely through retaining a portion of the photoimageable material;
- retaining a third portion of the photoimageable material that is greater in thickness than the second portion retained portion of the photoimageable material;
- and
- forming an opening in the dielectric material defined by the opening in the photoimageable material, wherein forming the opening in the dielectric comprises:
- forming the opening to a depth less than necessary to expose a contact point;
- removing the retained photoimageable material over the second portion of the opening exposing the dielectric material through the second opening portion, wherein removing the retained photoimageable material comprises exposing the photoimageable material of the first, second, and third portions to a light source;
- and
- after removing the photoimageable material, exposing the contact point.
7 more elements
A method comprising:
- developing a first portion of photoimageable material over an opening area of a dielectric material;
- leaving undeveloped photoimageable material in a second portion of photoimageable material at a second area designated for an opening through a dielectric material;
- retaining a third portion of photoimageable material that is greater in thickness than the second portion of photoimageable material;
- forming a first opening in the opening area in the dielectric material at the first portion of photoimageable material to a depth equivalent to the thickness of the dielectric material less a selected depth for the second portion of the opening;
- after forming the first opening, removing the undeveloped photoimageable material at the second portion of photoimageable material;
- and
- after removing the undeveloped photoimageable material, forming a second opening in the dielectric material at the first portion of photoimageable material to define a substrate via opening in the dielectric layer and a third opening in the dielectric material at the second portion of photoimageable material to define a substrate trench opening in the dielectric layer;
- and
- after forming the second opening in the dielectric material at the first portion, forming an interconnect coupled to the contact point.
6 more elements
Dependencies are inferred from the claim text.