Resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTakanobu Takeda, Osamu Watanabe, Kazuhiro Hirahara, Kazunori Maeda, Wataru Kusaki, Shigehiro Nagura
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Abstract
A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.
Claims7
A chemically amplified positive resist composition comprising:
- (A) an organic solvent,
- (B) a base resin of a polymer having recurring units of the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000,
- wherein R1, R2 and R3 each are hydrogen or methyl, Z is a straight, branched or cyclic alkylene group of 2 to 10 carbon atoms, R4 is hydrogen or a straight, branched or cyclic alkyl group of 1 to 10 carbon atoms, which may contain an oxygen atom, R5 is a tertiary alkyl group of 5 to 20 carbon atoms, p, q and r are positive numbers satisfying p+q+r=1, and
- (C) a photoacid generator.
A resist composition comprising
- (A) an or organic solvent.
- (B) a base resin of a polymer having recurring units of the following formula (2) and having a weight average molecular weight of 1,000 to 500,000,
- wherein R6, R7 and R8 each are hydrogen or methyl, R9 is a tertiary alkyl group of 5 to 20 carbon atoms, s, t and u are positive numbers satisfying s+t+u=1 and
- (C) a photoacid generator.
Dependencies are inferred from the claim text.