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US 6,641,959 B2Granted
Absorberless phase-shifting mask for EUV
AssigneeIntel Corporation
InventorPei-Yang Yan
Life of this patent
Estimating the term…
Abstract
The present invention discloses a mask having a substrate; a lower multilayer mirror disposed over the substrate, the lower multilayer mirror having a first region and a second region; a buffer layer disposed over the second region of the lower multilayer mirror; and an upper multilayer mirror disposed over the buffer layer. The present invention further discloses a method of forming such a mask.
Claims22
A method of forming an absorberless EUV mask comprising:
- providing a substrate;
- forming a lower multilayer mirror over said substrate;
- forming a buffer layer over said lower multilayer mirror;
- forming an upper multilayer mirror over said buffer layer;
- patterning said upper multilayer mirror into a first portion and a second portion;
- removing said upper multilayer mirror in said first portion;
- and
- removing said buffer layer in said first portion.
5 more elements
An absorberless EUV apparatus comprising:
- a substrate;
- a lower multilayer mirror disposed over said substrate, said lower multilayer mirror having a first region and a second region;
- a buffer layer disposed over said second region of said lower multilayer mirror;
- and
- an upper multilayer mirror disposed over said buffer layer.
2 more elements
An EUV apparatus comprising:
- an illumination system adapted to provide radiation;
- a condenser system adapted to collect said radiation provided by said illumination system;
- an absorberless phase-shifting mask adapted to reflect said radiation collected by said condenser systems,
- said absorberless phase-shifting mask comprising:
- a substrate:
- a lower multilayer mirror disposed over said substrate, said lower multilayer mirror having a first region and a second region;
- a buffer layer disposed over said second region of said lower multilayer mirror;
- and
- an upper multilayer mirror disposed over said buffer layer;
- an imaging system adapted to project said radiation reflected by said absorberless phase-shifting mask;
- and
- a wafer adapted to receive said radiation projected by said imaging system.
9 more elements
Dependencies are inferred from the claim text.