Silicon carbide epitaxial layers grown on substrates offcut towards <1100>
AssigneeAdvanced Technology Materials, Inc.
InventorsBarbara E. Landini, George R. Brandes, Michael A. Tischler
Life of this patent
Estimating the term…
Abstract
A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.
Claims14
A device quality epitaxial SiC film, grown on an offcut surface of a SiC substrate, wherein said SiC substrate comprises a 4H—SiC or 6H—SiC substrate having a hexagonal crystal structure, wherein the offcut surface has an offcut angle of from about 6 to about 10 degrees, and the crystallographic direction of the offcut surface being towards one of the six equivalent <1{overscore (1)}00> directions of the substrate ±7.5 degrees, wherein said SiC film is doped with a dopant species at a dopant concentration of from about 1×1018 to about 1×1021 atoms·cm−3.
A silicon carbide article, comprising:
- a SiC substrate of hexagonal crystal form, with an offcut surface having an offcut angle of from about 6 to about 10 degrees, and the crystallographic direction of the offcut surface being towards one of the six equivalent <1{overscore (1)}00> directions of the substrate ±7.5 degrees;
- and
- an epitaxial SiC film, grown on the offcut surface and doped with a dopant species at a dopant concentration of from about 1×1018 to about 1×1021 atoms·cm−3.
A silicon carbide article comprising a 4H—SiC epilayer him grown on a (0001) 4H—SiC crystalline substrate offcut towards the 1{overscore (1)}00> crystalline direction of the substrate, wherein said (0001) 4H—SiC crystalline substrate has an offcut angle of from about 6 to about 10 degrees, and wherein said 4H—SiC epilayer film is doped with a dopant species at a dopant concentration of from about 1×1018 to about 1×1021 atoms·cm−3.
Dependencies are inferred from the claim text.