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US 6,641,867 B1Granted
Methods for chemical vapor deposition of tungsten on silicon or dielectric
AssigneeTexas Instruments Incorporated
InventorsWei-Yung Hsu, Jiong-Ping Lu, August J. Fischer, Ming-Jang Hwang
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Abstract
In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a dielectric, then reacted with WF6 to replace the silicon with tungsten, which provides a nucleation layer for bulk tungsten deposition.
Claims1
A fabrication method for adhering tungsten to an underlying layer of dielectric or silicon, comprising the steps of:
- (a) providing an underlying layer;
- (b) forming a thin layer of a first material over said underlying layer;
- (c) nitriding said thin layer of first material, said nitrided layer of first material having a thickness less than the tunneling thickness of said nitrided layer of first material;
- and
- (d) depositing a layer of CVD tungsten in contact with said thin nitrided layer of first material, said layer of tungsten adhering to said underlying layer;
- wherein said underlying layer comprises polysilicon and said first material consists substantially of tungsten.
3 more elements
Dependencies are inferred from the claim text.