Heatsink and fabrication method thereof
AssigneeSumitomo Electric Industries, Ltd.
InventorsHirohisa Saito, Yoshiyuki Yamamoto, Kiichi Meguro, Takahiro Imai
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Abstract
A method of fabricating a heatsink including a substrate of a sintered compact containing Cu and W, and a thin diamond film layer formed on the surface of the substrate with good adherence, involves immersing the substrate in acid to reduce the Cu content of a surface region thereof and to roughen exposed W at that surface region, and then forming the thin diamond film layer on that surface region by vapor synthesis. Alternatively, a thin diamond film layer is formed on a surface of a porous body substrate, and then a hole in the porous body substrate is filled with Cu.
Claims15
A heatsink fabrication method comprising the steps:
- a) immersing a surface of a substrate including Cu and a metal having a low thermal expansion coefficient in an acid to reduce a Cu content of a region of a surface layer of said substrate, and to expose and roughen an exposed surface of said metal at said region, wherein said step a) is carried out until a portion of said substrate within 30 μm in depth from said surface of said substrate at said region has a porosity of at least 5% by volume and not more than 70% by volume, and has a Cu content that is not more than 50% of an entire Cu content of said substrate;
- and
- b) forming a thin diamond film layer by vapor synthesis on said region of said surface layer.
A heatsink fabrication method comprising the steps:
- a) forming a thin diamond film layer on a first surface area of a porous body having a low thermal expansion coefficient, and
- b) filling a hole in said porous body with Cu after said step of forming said thin diamond film layer, wherein said hole opens at a second surface area of said porous body different from said first surface area.
Dependencies are inferred from the claim text.