US 6,641,677 B1 · Method of reducing water spotting and oxide growth on a semiconductor structure

Abstract

The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface. The semiconductor structure is drawn out of the DI water bath at a rate that allows substantially all DI water, and contaminants therein, to be entrained beneath the IPA-DI water interface. In a second embodiment of the present invention, chemical treatment, rinsing, and drying are carried out in a single vessel. In a third embodiment of the present invention, a retrofit spray/dump rinser with a lid is used for rinsing and drying according to the method of the present invention.

Claims34

Dependent claims

A method of cleaning a semiconductor structure, comprising:

providing a substantially enclosed treatment vessel having a fail-shut effluent valve;
substantially filling said treatment vessel with a gas inert to said semiconductor structure for creating an atmosphere of inert gas inside said substantially enclosed treatment vessel;
positioning a semiconductor structure within said substantially enclosed treatment vessel;
rinsing said semiconductor structure with DI water in said atmosphere of inert gas within said substantially enclosed treatment vessel;
submerging said semiconductor structure in a DI water bath in said substantially enclosed treatment vessel, said DI water bath having a surface with said gas;
forming a substantially continuous layer of a drying liquid upon said surface of said DI water bath, said layer forming a drying liquid-DI water interface;
contacting said semiconductor structure with said continuous layer of said liquid;
retaining said DI water bath below said liquid;
and
displacing said DI water bath through said fail-shut effluent valve by feeding additional inert gas into said treatment vessel, such that said continuous layer of drying liquid substantially wipes down said semiconductor structure.

7 more elements

Dependencies are inferred from the claim text.

Method of reducing water spotting and oxide growth on a semiconductor structure

Life of this patent

Method of reducing water spotting and oxide growth on a semiconductor structure

Life of this patent

Abstract

Claims34